US20050139810A1 - Method of doping organic semiconductors with quinone derivatives and 1, 3, 2 - dioxaborine derivatives - Google Patents

Method of doping organic semiconductors with quinone derivatives and 1, 3, 2 - dioxaborine derivatives Download PDF

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US20050139810A1
US20050139810A1 US11/047,972 US4797205A US2005139810A1 US 20050139810 A1 US20050139810 A1 US 20050139810A1 US 4797205 A US4797205 A US 4797205A US 2005139810 A1 US2005139810 A1 US 2005139810A1
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Olaf Kuehl
Horst Hartmann
Olaf Zeika
Martin Pfeiffer
Zheng Youxuan
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Definitions

  • the invention relates to the use of an organic mesomeric compound as an organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof, a doped semiconducting matrix material, and an electronic component made of the latter.
  • organic semiconductors may likewise be strongly influenced with regard to their electrical conductivity by doping.
  • Such organic semiconducting matrix materials may be made up either of compounds with good electron-donor properties or of compounds with good electron-acceptor properties.
  • strong electron acceptors such as tetracyanoquinonedimethane (TCNQ) or 2,3,5,6-tetrafluorotetracyano- 1,4-benzoquinonedimethane (F4TCNQ) have become well known.
  • TCNQ tetracyanoquinonedimethane
  • F4TCNQ 2,3,5,6-tetrafluorotetracyano- 1,4-benzoquinonedimethane
  • the compounds previously investigated have disadvantages for technical use in the production of doped semiconducting organic layers or of suitable electronic components with doped layers of this kind.
  • the manufacturing processes in large technical production plants or those on a technical scale cannot always be precisely controlled, requiring high control and regulation expenses during processing in order to obtain the desired product quality, or to undesirable tolerances of the products.
  • the electronic components may exhibit undesirable heterogeneities or the electronic components may exhibit undesirable aging effects.
  • care has to be taken to see that the dopants used have appropriate electron affinities and other properties suitable for the particular application, since under certain conditions the dopants also help to determine the conductivity or other electrical properties of the organic semiconducting layer.
  • the object of the invention is to prepare organic dopants for doping organic semiconductors which are easier to handle during the production process and which result in electronic components whose organic semiconducting materials are capable of being produced reproducibly.
  • the invention relates to the use of an organic mesomeric compound as organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof.
  • an organic mesomeric compound as organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof.
  • a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative may be used as a mesomeric compound, which under like evaporation conditions has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ).
  • FIG. 1 shows the doping of ZnPc with N,N′-dicyano-2,3,5,6-tetrafluoro-1,4-quinonediimine (F4DCNQI).
  • FIG. 2 shows the doping of ZnPc with N,N′-dicyan-2,5-dichloro-1,4-quinonediimine (C12DCNQI).
  • FIG. 3 shows the doping of ZnPc with N,N′-dicyano-2,5-dichloro-3,6-difluoro-1,4-quinonediimine (C12F2DCNQI).
  • FIG. 4 shows the doping of ZnPc with N,N′-dicyano-2,3,5,6,7,8-hexafluoro-1,4-naphtho-quinonediimine (F6DCNNOI).
  • FIG. 5 shows the doping of ZnPc with 1,4,5,8-tetrahydro-1,4,5,8-tetrathia-2,3,6,7-tetracyano-anthraquinone (CN4TTAQ).
  • FIG. 6 shows the doping of ZnPc with 2,2,7,7-tetrafluoro-2,7-dihydro-1,3,6,8-tetraoxa-2,7-dibora 4,9,10,11,12-pentachloro-benzo[e]pyrene.
  • the present invention relates to an organic mesomeric compound usable as an organic dopant, which is a quinone or quinone derivative, in particular an unsubstituted, substituted or anellated quinone or quinone derivative, or a 1,3,2-dioxaborine or 1,3,2-dioxaborine derivative, in particular, an unsubstituted, substituted or anellated 1,3,2-dioxaborine or 1,3,2-dioxaborine derivative and which under like conditions of evaporation has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ).
  • a quinone or quinone derivative in particular an unsubstituted, substituted or anellated quinone or quinone derivative
  • a 1,3,2-dioxaborine or 1,3,2-dioxaborine derivative in particular, an unsubstituted, substituted or anellated 1,3,2-dioxaborine or 1,3,2-diox
  • the quinone derivatives of the present invention are, in particular, quinoid systems in which one, two or more quinoid oxygen atoms is/are replaced by a mesomerically and/or inductively electron-attracting, double bond-bonded substituent, in particular, by one of the substituents indicated below.
  • Inductively electron-attracting is to be understood as those residues, which with respect to carbon, have an inductive effect on unsaturated hydrocarbons. Due to high evaporation temperature and low volatility under similar conditions, production processes can be controlled better and carried out with less effort and greater reproducibly.
  • quinones and their derivatives or 1,3,2-dioxaborines and their derivatives as dopants permit sufficient electrical conductivity of the organic semiconducting matrix with favorable electron affinity of the dopants in the respective components at low coefficients of diffusion, which ensure component structures remaining constant over time.
  • charge-carrier injection of contacts into the doped layer can be improved by the dopants.
  • the doped organic semiconducting material and the resulting electronic component because of the compounds used according to the invention, can have improved long-term stability. This relates, for example, to a reduction in the dopant concentration with time.
  • this relates to the stability of the doped layer, which is located adjacent to undoped layers of an electrooptical component, resulting in electrooptical components with high long-term stability of electrooptical properties, such as luminous yield at a given wavelength, efficiency of a solar cell or the like.
  • volatility may be determined as the evaporation rate measured under like conditions, for example, a pressure of 2 ⁇ 10 ⁇ 4 Pa and a specified evaporation temperature of 150° C.
  • the volatility may be determined as the evaporation rate of a substrate measured as layer thickness growth per unit of time (nm/s) under otherwise like conditions.
  • the volatility of the compounds according to the present invention is ⁇ 0.95 times or 0.9 times, preferably ⁇ 0.8 times, more preferably ⁇ 0.5 times, even more preferably ⁇ 0.1 times or ⁇ 0.05 times or ⁇ 0.01 times that of F4TCNQ or less.
  • the evaporation rate of the substrate with the compounds according to the present invention may be determined, for example, by the use of a quartz thickness monitor, as is customarily used for example in the production of OLEDs.
  • the ratio of the evaporation rates of matrix materials and dopants may be measured by independent measurements thereof with the use of two separate quartz thickness monitors to adjust the doping ratio.
  • the volatility relative to that of F4TCNQ may in each instance be referred to that of the pure compound or to the volatility in a given matrix material, for example ZnPc.
  • the compounds used according to the present invention preferably are procured in such a way that they evaporate relatively or practically undecomposed.
  • precursors may alternatively be selectively used as dopant sources, which release the compounds used according to the present invention, for example acid addition salts, a volatile or non-volatile inorganic or organic acid, or charge-transfer complexes thereof, where the acids or electron donors preferably are not or are only slightly volatile or the charge-transfer complex itself works as dopant.
  • the dopant preferably is selected in such a way that under otherwise like conditions, such as doping concentration, molar ratio of dopant matrix, layer thickness, and current, in a given matrix material (for example, zinc phthalocyanine or another matrix material mentioned further below) generates a conductivity just as high as or preferably higher than F4TCNQ.
  • a conductivity may be a conductivity (s/cm) greater than or equal to 1.1 times, 1.2 times or greater than/equal to 1.5 times or two times that of F4TCNQ as dopant.
  • the dopant used according to the present invention preferably is selected in such a way that the semiconducting organic matrix material doped with the dopant, after a temperature change from 100° C. to room temperature (20° C.) still has ⁇ 20%, preferably ⁇ 30%, more preferably ⁇ 50% or 60% of the conductivity (s/cm) of the value at 100° C.
  • a variety of quinone derivatives and in addition 1,3,2-dioxaborines may be used as dopants for the said preferred hole-transport materials HT.
  • one, two, three or four or all quinoid ⁇ O groups of the quinoid compound which may represent an ortho or para-quinoid system, where alternatively mixed ortho-para quinoid systems may occur in multinuclear quinoid systems, may be selected from the group, as they are defined below for the substituents S1 to S11, S13 to S21, optionally alternatively without S1, the substituents being defined below.
  • one, two, three, four or more or all substituents for a quinoid ⁇ O group may be selected from the group consisting of S1-S11, S14-S16, optionally alternatively without S1, or be selected from the group consisting of S1, S5-S14 and S16, optionally alternatively without S1, or be selected from the group consisting of S3, S4, S6-S10, S15, S16, optionally alternatively without S1.
  • one, two, three, four or more or all substituents for a quinoid ⁇ O group may be selected from the group consisting of S1, S5, S7-S9, S11, S14, S16-21, optionally alternatively without S1, or from the group S1, S5, S8, S9, S11, S14, S16, S18, optionally alternatively without S1.
  • one, two, three, four or more or all substituents for a quinoid group ⁇ O may be ⁇ C(CN) 2 or ⁇ N(CN) or ⁇ N(NO2) 2 or ⁇ C(CN) (C(O)R) or ⁇ N(C(O)R).
  • one, two, three or four or more or all quinoid substituents of the quinoid system contain a mesomerically linked —NO2 and/or —C(O)R group.
  • the compounds indicated in each instance may comprise all stereoisomers, in particular syn and anti isomers, providing that these are sterically possible in each instance.
  • substituents T, U, V, W, X, Y and Z preferably represent mesomeric and/or referred to carbon or a hydrocarbon, in particular a saturated hydrocarbon, inductively attracting double bond-bonded substituents.
  • the substituents T, U, V, W, X, Y and/or Z may in each instance be unlike or alike and be selected from the group consisting of: where R preferably is an organic residue or hydrogen.
  • R17 may in particular alternatively be —CF 3 , or perfluoroalkyl, in particular with C1-C6. If the substituent is S17, X and Y of the substituent S17 preferably are not again S17 and/or S18 to S21.
  • the substituents T, U, V, W, X and/or Z in compounds 1-33 may in particular in each instance be alike or unlike and be selected from the group consisting of where R preferably is an organic residue or hydrogen, while R17 of group S8 in particular may alternatively be —CF 3 or in general perfluoroalkyl, in particular with C1 to C6. In particular, one, two, three, four or all of the substituents may be selected from this group.
  • X and Y may be alike or unlike and X or Y or X and Y may be selected from this group.
  • V and W may be alike or unlike and V or W or V and W may be selected from this group.
  • the substituents T, U, V, W, X, Y and/or Z in compounds 1 to 33 may in each instance be alike or unlike and be selected from the group consisting of where R preferably is an organic residue or hydrogen, while R17 of group S8 in particular may alternatively be —CF3 or in general perfluoroalkyl, in particular with C1 to C6. In particular, one, two, three, four or all of the substituents may be selected from this group.
  • X and Y may be alike or unlike and X or Y or X and Y may be selected from this group.
  • V and W may be the alike or unlike and V or W or V and W may be selected from this group.
  • the substituents T, U, V, W, X, Y and/or Z in compounds 1 to 33 may in each instance be alike or unlike and may be selected from the group consisting of where R preferably is an organic residue or hydrogen, while R17 of the group S8 in particular may alternatively be —CF 3 or in general perfluoroalkyl, in particular with C1 to C6. In particular, one, two, three, four or all of the substituents may be selected from this group.
  • X and Y may be alike or unlike and X or Y or X and Y may be selected from this group.
  • V and W may be alike or unlike and V or W or V and W may be selected from this group.
  • the substituents T, U, V, W, X, Y and/or Z in compounds 1 to 33 may alternatively in each instance be alike or unlike and be selected from the group consisting of S1, S5, S7-S9, S11, S14, S16-21, optionally alternatively without S1, or from the group S1, S5, S8, S9, S11, S14, S16, S18, optionally alternatively without S1.
  • one, two, three, four or all of the substituents may be selected from this group.
  • X and Y may be alike or unlike and X or Y or X and Y may be selected from this group.
  • V and W may be alike or unlike and V or W or V and W may be selected from this group.
  • the following relationships between the substituents may apply to compounds 1 to 33.
  • the following substituent relationships may in particular apply to the group of substituents S1 to S21.
  • the following substituent relationships may apply to the group of substituents S1 to S11, S14 to S16.
  • the following substituent relationships may apply to the group of substituents S1, S5-S14, S16.
  • the following substituent relationships may apply to the group S3, S4, S6-10, S15, S16.
  • X and/or Y may not or may not simultaneously be ⁇ O or ⁇ C(CN)2.
  • V and/or W may not or may not simultaneously be ⁇ O or ⁇ C(CN)2.
  • the substituents AA and BB preferably are in each instance alike, and may alternatively be unlike one another.
  • ⁇ X and ⁇ Y may be unlike ⁇ O.
  • At least one or both substituents in the group ⁇ X and ⁇ Y are unlike ⁇ S.
  • At least one or both substituents in the group ⁇ X and ⁇ Y may be unlike ⁇ C(CN) 2 .
  • At least one or both substituents in the group ⁇ X and ⁇ Y are ⁇ N(CN).
  • At least one or both substituents in the group ⁇ X and ⁇ Y and/or one or both substituents in the group ⁇ V and ⁇ W equal ⁇ N(NO2).
  • At least one or both substituents in the group ⁇ X and ⁇ Y and/or one or both substituents in the group ⁇ V and ⁇ W equal ⁇ NR, where R may alternatively be —CF 3 or in general perfluoroalkyl, in particular with C1-C6.
  • At least one or both substituents in the group ⁇ X and ⁇ Y and/or one or both substituents in the group ⁇ V and ⁇ W equal ⁇ N(C(O)R 18 .
  • At least one or both substituents in the group ⁇ X and ⁇ Y and/or one or both substituents in the group ⁇ V and ⁇ W equal ⁇ C(NO 2 ) 2 .
  • At least one or both substituents in the group ⁇ X and ⁇ Y and/or one or both substituents in the group ⁇ V and ⁇ W equal ⁇ C(C(O)R 13 ) (C(O)R 14 ).
  • At least one or both substituents in the group ⁇ X and ⁇ Y and/or one or both substituents in the group ⁇ V and ⁇ W equal ⁇ C(CF 3 ) 2 or in general ⁇ C(perfluoroalkyl) 2, in particular with C1-6.
  • X may be ⁇ Y in each instance or all substituents X, Y, U, V, T, W, Z may be alike, without being limited thereto.
  • a quinoid compound generally all quinoid substituents may be alike.
  • X or Y or X and Y are not O, in particular for the compounds 1 or 20 or for compounds with only one quinoid ring.
  • X or Y or X and Y are not S, in particular for the compounds 1 or 20.
  • X or Y or X and Y are not ⁇ C(CN)2, in particular, for compounds 1 or 20. This applies in particular to a compound with only one 6-membered quinoid ring, in particular, a ring with 6 C atoms.
  • the quinoid ring in particular when only one quinoid ring is present, preferably with at least one or at least two aryl residues, of which one, more or all may alternatively have heteroatoms, is anellated or substituted.
  • the substituents AA and/or BB are double-bond, mesomerically and/or inductively electron-attracting substituents, preferably selected from the following group where optionally other suitable divalent, in particular including double-bond, substituents may alternatively be used.
  • R28 may in particular alternatively be —CF 3 or another perfluoroalkyl group, preferably with C1-6.
  • the compound according to the present invention may represent a quinoid system with a quinoid ring and 1, 2 or 3 or more anellated and/or in each instance aromatic rings forming a residue R.
  • the aromatic rings may in each instance have one or more heteroatoms and be substituted or unsubstituted.
  • the quinoid system may be an ortho or para quinoid system.
  • the quinoid system may in particular be selected from the group of compounds 1-33, without being limited thereto.
  • the invention also comprises compounds with a quinoid system of two rings of 5 or 6 ring atoms in each instance, which may be anellated with 1, 2, 3,4, 5 or 6 or more aromatic rings and/or be substituted with formation of a residue R.
  • the aromatic rings may be substitute or unsubstituted.
  • the rings in each instance preferably have 6 atoms, which may be 6 carbon atoms.
  • 1, 2, 3 or 4 or more C atoms may be replaced by heteroatoms such as O, S, N.
  • a variety of quinoid systems may be anellated, mesomerically bonded by one or more double or triple bonds, which may be C—C bonds or heteroatom-C— bonds, or otherwise linked.
  • the bond may in particular be selected from the group of compounds 1-33, without being limited thereto.
  • the present invention relates to compounds having 3 or 4 quinoid rings of 5 or 6 atoms independent of one another in each instance, which may have 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10 anellated aromatic rings or forming a residue R with 6 atoms.
  • the aromatic rings may be substituted or unsubstituted.
  • a plurality of rings or the compound as a whole 1, 2, 3 or 4 atoms may be heteroatoms such as O, N or P.
  • the compound may in particular be selected from the group of compounds 1-33, without being limited thereto.
  • the compounds used according to the present invention may have 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10 aryl residues, of which preferably at least one, more or especially preferably all are anellated with one or more quinoid systems and/or with one another, and/or form the residues R.
  • the aromatic rings may be substituted or unsubstituted.
  • heteroaryl residues are also to be understood as aryl residues.
  • the aryl residues may in each instance link two quinoid rings to one another, preferably with mesomeric linkage of the quinoid rings.
  • the quinoid system may be selected from the group of compounds 1-33, without being limited thereto.
  • 2 or 3 or more (hetero)aryl rings may be located between the quinoid rings, bridging them.
  • the compounds used according to the present invention may have 2, 3, 4, 5 or 6 or more quinoid ring systems.
  • one, more or all of the quinoid rings are 5 or 6-membered. Ring carbon atoms may be replaced by heteroatoms.
  • At least two, more or all of the quinoid rings may be anellated together with mesomeric linkage to form a larger quinoid system or be mesomerically linked by one or more bridges or not linked with formation of a larger mesomeric system.
  • the compound may in particular be selected from the group of compounds 1-33, without being limited thereto.
  • the quinoid system may in particular be selected from the group of compounds 1-33, without being limited thereto.
  • the substituents A, B, K, D, E, F, G, H of the compounds 14 and 15 may be unlike or alternatively alike and assume the following structures, imionitrogen ⁇ N—, phosphine ⁇ P— or the substituted methylene carbon ⁇ C ⁇ R 1-8 .
  • the residues R 1 to R 32 may be alike or unlike and be selected from the group consisting of hydrogen, halogen, (in particular —F, —C1), cyano, nitro, nitroso, sulfamide (unsubstituted or substituted, in particular C1-C6 mono or dialkyl substituted), carboxy, C1-C7 carbalkoxy, C1-C7 sulfo, sulfohalogen (in particular —F or —C1), halogen carbonyl (in particular —F or —C1), carbamoyl (unsubstituted or substituted, in particular C1-C6 N monosubstituted or alike or independently of one another N—C1-C6 disubstituted), formyl, amidineformyl, C1-C6 alkylsulfanyl, C1-C6 alkylsulfonyl, C1-C25 hydrocarbon, preferably C1-C14 hydrocarbon or C1
  • the hydrocarbon groups may in each instance in particular be perhalogenated, perchlorinated or perfluorinated (in particular trifluoromethyl).
  • the hydrocarbon groups may be linear or branched or cyclic, for example cyclohexyl or cyclopentyl.
  • One or more carbon atoms may in each instance be replaced by heteroatoms, in particular N, O, S, —(O)S(O)— or P(R).
  • the (hetero) hydrocarbon residues may be cyclically linked with one another or with a quinoid or other ring, for example a (hetero)aryl ring.
  • the residues R 1 to R 32 may be one of the groups acetyl-, trifluoroacetyl-, benzoyl-, pentafluorobenzoyl-, naphthoyl- or alkoxycarbonyl-, where the alkyl residue may be an alkyl with one up to six or to ten, in particular up to four, C atoms linked together unbranched or branched, as well as trialkyl-phosphoryl with alkyl residues, which likewise may consist of a chain with up to five or six or eight carbon atoms linked together unbranched or branched or cyclically or triarylphosphoryl with aryl residues with preferably 6 to 14 C atoms, in particular up to 10 C atoms.
  • residues R 1 -R 32 which may be alike or unlike, may be either aryl or heteroaryl, such as for example phenyl, naphthyl, anthranyl, pyridyl, quinoxalyl, pyrazoyl, oxazolyl, 1,3,2-dioxaborinyl or 1,3,4 oxdiazolyl, which may be substituted either by hydrogen or an aryl of low molecular weight with one to eight saturated carbon atoms, which may be linked together unbranched or branched or cyclically, preferably however by halogen, primarily fluorine or chlorine, trichloromethyl, perfluoroalkyl with one to six carbon atoms, in particular trifluoromethyl, but alternatively by cyano, nitro, nitroso, sulfo, carboxyl, carbalkoxy, halogen carbonyl, carbamoyl, formyl, amidineformyl, alkyls
  • residues R 2 , R 3 , R 4 , R 5 , R 6 in the compounds 3, 3b, 3c or formulas IV, V or VI may be alike or unlike for unlike n or m.
  • the residues R 1 to R 32 which are linked with a quinoid or aromatic system of a compound used according to the invention and are arranged adjacent to one another and are separated by two, three or four atoms of the quinoid or aromatic skeletal structure, may be linked together with formation of a carbocyclic, in particular aromatic ring, or heterocyclic, in particular heterocarbocyclic ring. This applies in particular to the compounds 1 to 33, but alternatively to other quinones or quinone derivatives used according to the invention.
  • every two adjacent residues from R 1 -R 32 may alternatively be linked together by a carboxy —(CO)— or a carbimide group —(CNR)—, where the analogous substitution pattern applies for this R as for R 1 -R 30 .
  • two adjacent residues R are linked together by carbon atoms or heteroatoms in such a way that a new carbocyclic or heterocyclic element is fused to the respective basic cyclic skeleton.
  • the residues R 1 and R 2 as well as R 3 and R 4 stand for a fused benzo or naphtho residue, but alternatively for a fused thiophene, furan, 1,3,4-oxdiazole, pyridine, pyrazine, triazine, tetrazine, pyrane, thiopyrane, dithiine, phosphorine, phthalic acid anhydride, phthalic acid imide or dithiazole residue, where these residues again may be exclusively or partially substituted by additional electron-attracting groupings, such as halogen, including preferably fluorine or chlorine, trifluoromethyl or cyano, nitro, nitroso, sulfo, carboxy, carbalkoxy, halogen carbonyl, carbamoyl, formyl, amidineformyl.
  • halogen including preferably fluorine or chlorine, trifluoromethyl or cyano, nitro, nitroso, sulfo, carboxy,
  • the bridged trans-diketo form of compound 8 may for example result in the structures 28 or 29.
  • the carboxylic acid anhydride acid may alternatively be replaced by a substituted nitrogen group ⁇ N—R 1 and hence form a carboxylic acid imide structure.
  • the aromatic residues, with which the quinoid systems may be substituted and/or anellated may be perhalogenated, in particular perfluorinated, perchlorinated or perfluorochlorinated.
  • a number, for example up to one-half or more, of the halogen atoms may be replaced by hydrogen.
  • CN groups may alternatively be provided on the aromatic residues and/or the quinoid systems.
  • Two quinoid systems Ch1 and Ch2 may in each instance be linked together with formation of a compound Ch1-ZB—Ch2 by a residue ZB, where the quinoid residues Ch1 and Ch2 may be linked together mesomerically or be mesomerically independent of one another.
  • the quinoid residues Ch1 and Ch2 may be alike or unlike and may be selected from the group of compounds 1 to 4 and 5 to 33, while optionally additional quinoid systems may alternatively be linked together, for example with formation of structures such as Ch1-ZB1-Ch2-35 ZB2-Ch3, where Ch1, Ch2, Ch3 may be alike or unlike and may in each instance represent the compounds 1 to 4 and 5 to 33, without being limited thereto.
  • ZB 1 and ZB2 may be alike or unlike.
  • the bridges -Z- may have 1, 2 to 4, up to 6 or up to 10 or alternatively more bridge atoms, which may be carbon atoms or at least in part heteroatoms.
  • this bridge -Z- may consist of alkenylene, haloalkenylene, acetylene, alkylene, haloalkylene, in particular perfluoroalkylene with one to eight saturated carbon atoms, which may be linked together unbranched or branched, or of arylene, hetarylene, which may be substituted either with hydrogen or with alkyl residues of low molecular weight with one to six or up to eight saturated carbon atoms, which may be linked together unbranched or branched or cyclically, preferably however with halogen, primarily fluorine or chlorine, trichloromethyl, perfluoroalkyl with one to six carbon atoms, there in particular trifluoromethyl, but alternatively cyano, nitro, nitroso, sulfo, carboxy, carbalkoxy, halocarbonyl, carbamoyl, formyl
  • the alkenylene group and the alkylene group may have one or more multiple C—C bonds.
  • the bridge atoms of group Z may consist only of unsaturated carbon atoms or heteroatoms, where the said groups may be unsubstituted or substituted.
  • the bridge atoms of group Z may consist only of saturated or aromatic carbon or heteroatoms, while the said groups may be unsubstituted or substituted, so that the two quinoid systems may be mesomerically linked together.
  • the bridge -Z- may comprise one or more groups, in particular the groups below in the form -(Z)n-, for example with n equal to 1, 2, 3 or 4 or more, which in each instance may be alike or unlike one another.
  • the residues R 1 and R 2 may be unlike the residues R 1 and R 2 of the basic structures of compounds 1 to 33.
  • 1,4-quinones may best be prepared by oxidation of the corresponding hydroquinone (W. T. Sumerford, D. N. Dalton, J. Am. Chem. Soc. 1944, 66, 1330; J. Miller, C. Vasquez, 1991 Patent US506836; K. Koch, J. Vitz, J. Prakt. Chem. 2000, 342/8825-7) or the fluorinated and/or chlorinated aromatic compounds (A. Roedig et al., Chem. B. 1974, 107, 558-65; 0. T. Osina, V. D. Steingarz, Zh. Org. Chem. 1974, 10, 329; V. D. Steingarz et al., Zh. Org. Chim. 1970, 6/4, 833).
  • 1,3-indanedione compounds have been synthesized by V. Khodorkovsky et al. (V. Khodorkovsky et al., Tetrahedron Lett. 1999, 40,4851-4).
  • N,N′-dicyano-1,4-quinonediimines are accessible either by the action of N,N′-bistrimethylsilylcarbodiimide on 1,4-quinone compounds (A. Aümuller, S. Hünig, Liebigs Ann. Chem., 1986, 142-64) or by oxidation of appropriate N,N′-dicyano-1,4-diamine compounds (G. D. Adreetti , S. Bradamante, P. C. Pizzarri, G. A. Pagani, Mol. Cryst. Liq. Cryst.
  • N,N′-dicyano-1,4-diamine compounds may be obtained by cyanization of phenylene-1,4-diamine with cyanohalogenides or by desulfurization of corresponding thiourea derivatives.
  • Simple tetracyanoquinone dimethanes may be prepared via 1,4-cyclo-hexanedione by condensation in benzene with ammonium acetate buffer on the water separator and subsequent oxidation by bromine (D. S. Acker, W. R. Hertler, J. Am. Chem. Soc. 1962, 84, 3370).
  • Hertler and co-workers showed that these compounds are capable of being synthesized via 1,4-xylene and its analogs by side-chain bromination, substitution by means of cyanide, condensation with carbonic diethyl ester, conversion of the carboxylic acid methyl ester groupings to cyanide groups and then oxidation ( J. Org. Chem. 1963, 28, 2719).
  • Acceptor-substituted tetracyanoquinonedimethanes may be prepared from the sodium salt of t-butyl-malonic acid dinitrile and acceptor-substituted 1,4-dihalogen aromatic compounds (R. C. Wheland, E. L. Martin, J. Org. Chem., 1975,40,3101).
  • tetracyanoquinonedimethanes have been prepared from 1,4-dihalogen aromatic compounds Pd-catalyzed with malodinitrile anion and subsequent oxidation (S. Takahashi et al., Tetrahedron Letters, 1985, 26, 1553).
  • Heteroanellated quinones have been prepared by the multiple-step synthesis pathway. (B. Skibo et al., J. Med. 1991, 34, 2954-61; H. Bock, P. Dickmann, H. F. Herrmann, Z. Naturforsch. 1991, 46b, 326-8, J. Druey, P. Schmidt, Helv. Chim. Acta 1950, 140, 1080-7).
  • Bridged quinoid compounds have been prepared by M. Matstoka, H. Oka, T. Kitao, Chemistry Letters, 1990, 2061-4; J. Dieckmann, W. R. Hertler, R. E. Benson, J. A. C. S. 1963, 28, 2719-24; K. Takahashi, S. Tarutani, J. C. S. Chem. Comm. 1994, 519-20; N. N. Woroschzov, W. A. Barchasch, Doklady Akad. SSSR 1966, 166/3, 598.
  • Anellated TCNQ compounds have been prepared by M. Matsuoka, H. Oka, T. Kitao, Chemistry Letters, 1990, 2061-4; B. S. Ong, B. Koeshkerian, J. Org. Chem. 1984, 495002-3.
  • Pyrazino-TCNQ compounds may be prepared via 5,8-diiodoquinoxalines palladium-catalyzed with the sodium salt of malodi nitril. (T. Miyashi et al., J. Org. Chem. 1992, 57, 6749-55).
  • Pyrazino-TCNQ compounds as well as other heteroanellated derivatives may be prepared in a variety of ways (Y. Yamashita et al., Chemistry Letters, 1986, 715-8, F. Wudl et al., J. Org. Chem. 1977, 421, 666-7).
  • Anellated DCNQI compounds may be synthesized via the corresponding quinones according to Hünig (J. Tsunetsuga et al., Chemistry Letters, 2002, 1004-5).
  • Heteroanellated DCNQI compounds may be synthesized via the corresponding quinones according to Hünig (T. Suzuki et al., J. Org. Chem. 2001, 66, 216-24; N. Martin et al., J. Org. Chem. 1996, 61, 3041-54; K. Kobayashy et al., Chemistry Letters, 1991, 1033-6; K. Kobayashy, K. Takahashi, J. Org. Chem. 2000, 65, 2577-9).
  • Heterocyclic quinoid derivatives may be prepared according to N. F. Haley, J. C. S. Chem. Comm. 1979, 1031, F. Weyland, K. Henkel Chem. B. 1943, 76, 818; H. J. Knackmuss, Angew. Chem. 1973, 85, 16; K. Fickentscher, Chem. B. 1969, 102, 2378-83, D. E. Burton et al., J. Chem. Soc. (C) 1968, 1268-73.
  • Tetracetylquinonemethane compounds and their reduced forms may be obtained via 1,4-benzoquinone and acetylacetone (J. Jenik, Chemicky prumys. 198535/601547, R. J. Wikholm, J. Org. Chem. 1985, 50, 382-4; E. Bematek, S. Ramstad, Acta Chem. Scand. 1953, 7, 1351-6).
  • Ditrifluoroacetamides may be prepared by means of trifluoroacetic acid via aromatic 1,4-diamines (R. Adams, J. M. Stewart, J.A.C.S. 1952, 20, 3660-4).
  • the dime may be obtained by oxidation with Pb(IV)-acetate.
  • 1,3,2-dioxaborine compounds may be used for doping semiconducting organic materials.
  • the bridge Am may have up to 6, up to 10 or up to 20 bridge atoms, which link the two 1,3,2-dioxaborine rings together, while the bridge atoms may in particular be carbon atoms and/or heteroatoms.
  • the 1,3,2-dioxaborine compound/s used according to the invention may have the general formula L1 where Q is a trivalent residue and where X is a monodentate ligand or where two ligands X together form a bidentate ligand.
  • 1,3,2-dioxaborines proposed here as dopants may have the general formulas 30-33 where in the formulas the various X and/or R1 to R3 may in each instance be alike or unlike one another.
  • residues X in the compounds of formulas L, LI or LII, in particular in compounds of formula types 30-33 represent a bidentate ligand
  • they are preferably the residues of organic dicarboxylic acids, such as in particular oxalic acid or malonic acid, succinic acid and glutaric acid, where these dicarboxylic acids, with the exception of the compounds first mentioned, may however be substituted in their alkylene groupings by alkyl or aryl groupings, the residues of aromatic dicarboxylic acids, such as phthalic acid and its derivatives preferably substituted in the ring by halogen, organic hydroxy acids, such as salicylic acid and its ring-substituted derivatives, 1-hydroxy-naphthaline-2-carboxylic acid, 2-hydroxy-naphthaline-1-carboxylic acid, mandelic acid, tartaric acid, benzylic acid and its derivatives substituted in phenyl residues with 1,2-dioxyarene or dioxyhetaren
  • the groupings A and Q may have a great multiplicity of structures and preferably represent a bivalent or trivalent grouping of atoms, such as oxygen, sulfur or nitrogen or a plurality of bivalent or trivalent aryl grouping(s) linked together in conjugative fashion, heteroaryl groupings(s), polyenyl or polymethinyl grouping(s), where the respective groupings may however bear additional substituents, which in particular may be alkyl groups with 1 to 10 carbon atoms, which in addition however may be substituted by fluorine or chlorine, in particular perhalogenated or perfluorinated, unsubstituted or preferably may be aryl or heteroaryl groupings modified by fluorine or chlorine as well as by electron-attracting substituents, where the heteroatoms in the last preferably are oxygen, sulfur or nitrogen and may occur individually as well as alternatively in combination with one another, or else alternatively may
  • a or Q symbolizes an aryl grouping
  • the latter advantageously is one or more of the groupings 34-36 and in the case of Q one or optionally alternatively a plurality of the groupings 37-39, where these may be substituted by customary substituents, which preferably bear electronegative trapped atoms
  • the residues R 5 and R 6 which may be alike or unlike, may be either hydrogen, alkyl or fluorine as well as chlorine, but preferably alternatively may on the whole be a carbon atom substituted by n-, iso- or cycloalkyl groups with 1-10 C atoms, where in compound 35 or 39 n preferably may be a whole number between 1 and 4.
  • W may be a trivalent group or a trivalent atom such as in particular N or P or the group 42, without being limited thereto.
  • a or Q symbolizes a hetaryl group
  • this preferably represents a grouping of the general formula 40 or 41, where optionally in the group A introductions according to formulas 40 and 41 may alternatively occur combined
  • Q a grouping of the general formula 42, in which the residues R7 and R8 may be any desired substituents, such as for example alkyl, aryl or heteroaryl as well as halogen or alkoxy, aryloxy, dialkylamino or diarylamino
  • the groupings Z1-Z6 may be bivalent heteroatoms, such as preferably oxygen, sulfur or unsubstituted or substituted nitrogen or phosphorus, and n may be a whole number, preferably between 1 and 4 or 6, in particular 1, 2 or 3.
  • the compounds according to the present invention of types 30-33 also include those in which the aforesaid bridge groupings may alternatively be found in combination with one another, such as is the case for example for an oxybiphenylene or thiophenylene unit as well as an aminotriphenylene unit, where linkage with the respective 1,3,2-dioxaborine system in any desired position to the heteroatom, preferably however in 1A-linkage, is possible.
  • the compounds according to the present invention include those in which, in addition to the said bridge groupings A and Q, one of the residues trapped in the 1,3,2-dioxaborine system is drawn into the respective bridge grouping, so that compounds of the general formulas 43-46 are produced, in which the groupings X and R 1 -R 3 have the meanings indicated above and R4 has the meaning corresponding to the residues R 1 -R 3 .
  • the symbol K stands for a grouping that links the two flanking 1,3,2-dioxaborine-containing molecular structures, preferably links them together conjugatively, which for example is possible by direct fusion of the two flanking groupings or with incorporation of an aryl or hetaryl fragment.
  • Acetylacetone (0.1 mol), oxalic acid (0.1 mol) and boric acid (0.1 mol) are heated in toluene (200 mL) until a clear solution is produced and no more water is separated. After cooling, the precipitated product is suctioned off and washed with cyclohexane. F. 187-189° C.
  • Triacetylmethane (0.1 mol) and bortrifluoride etherate (0.15 mol) are stirred in ether (200 mL) for 20 hrs at room temperature. Then the precipitated product is suctioned off and washed with cyclohexane. F.>250° C.
  • Suitable dopants for organic semiconducting materials such as hole- transport materials HT, which customarily are used in OLEOs or organic solar cells, are described in the present invention.
  • the semiconducting materials preferably are intrinsically hole-conducting. The following may apply for dopants of the quinone type as well as of the dioxaborine type.
  • the matrix material may consist partially (>10 or >25 wt. %) or substantially (>50 wt. % or >75 wt. %) or completely of a metal phthalocyanine complex, a porphyrin complex, in particular metal porphyrin complex, an oligothiophene, oligophenyl, oligophenylenevinylene or oligofluorene compound, where the oligomer preferably comprises 2-500 or more, preferably 2-100 or 2-50 or 2-10 monomer units.
  • the oligomer may alternatively comprise >4, >6 or >10 or more monomer units, in particular alternatively for the regions indicated above, i.e.
  • the monomers and oligomers may be substituted or unsubstituted, where alternatively block or mixed polymers in the said oligomers of a compound with a triarylamine unit or a spiro-bifluoro compound may be present.
  • the said matrix materials may alternatively be present in combination with one another, optionally alternatively in combination with other matrix materials.
  • the matrix materials may have electron-shifting substituents such as alkyl or alkoxy residues, which have reduced ionization energy or which reduce the ionization energy of the matrix material.
  • the metal phthalocyanine complexes or porphyrin complexes used as matrix materials may have a main group metal atom or a metal atom of the B group.
  • the phthalocyanine complex or porphyrin complex may in each instance be partially hydrated, where however the mesomeric ring system preferably is not disturbed.
  • the phthalocyanine complexes may contain as central atom for example magnesium, zinc, iron, nickel, cobalt, magnesium, copper or vanadyl ( ⁇ VO).
  • central atom for example magnesium, zinc, iron, nickel, cobalt, magnesium, copper or vanadyl ( ⁇ VO).
  • metal atoms and oxometal atoms may be present in the case of porphyrin complexes.
  • such dopable hole-transport materials HT may be arylated benzidines, for example N,N′-perarylated benzidines or other diamines such as types TFD (where one, more or all of the aryl groups may have aromatic heteroatoms), suitable arylated starburst compounds such as N,N′,N′-perarylated starburst compounds, such as the compound TDA T A (where one, more or all of the aryl groups may have aromatic heteroatoms).
  • suitable arylated starburst compounds such as N,N′,N′-perarylated starburst compounds, such as the compound TDA T A (where one, more or all of the aryl groups may have aromatic heteroatoms).
  • the aryl residues may in particular comprise, for each of the compounds mentioned above, phenyl, naphthyl, pyridine, quinoline, isoquinoline, peridazine, pyrimidine, pyrazine, pyrazole, imidazole, oxazol, furan, pyrrole, indole or the like.
  • the phenyl groups of the respective compounds may be partially or completely replaced by thiophene groups.
  • the matrix material used consists completely of a metal phthalocyanine complex, a porphyrin complex, a compound having a triarylamine unit or a spiro-bifluorene compound.
  • organic matrix materials that have semiconducting properties, in particular hole-conducting materials, may be used.
  • Doping 101561 Doping may in particular take place in such a way that the molar ratio of matrix molecule to dopant, or in the case of oligomeric matrix materials, the ratio of the number of matrix monomers to dopant is 1:100000, preferably 1:1 to 1:10,000, especially preferably 1:5 to 1:1000, for example 1:10 to 1:1 00, for example about 1:50 to 1:100 or alternatively 1:25 to 1:50.
  • Doping of the respective matrix material, indicated as hole-conducting matrix material HT, with the dopants to be used according to the present invention may be produced by one or a combination of the following methods:
  • the dopants according to the invention may be used for the production of organic light-emitting diodes (OLEOs), organic solar cells, organic diodes, in particular those with high rectifying behavior such as 103-107, preferably 104-107 or 105-107, or organic field-effect transistors.
  • OLEOs organic light-emitting diodes
  • the dopants according to the present invention allow the conductivity of the doped layers and/or the charge-carrier injection of contacts into the doped layer to be improved.
  • the component may have a pin structure or an inverse structure, without being limited thereto.
  • use of the dopants according to the present invention is not limited to the advantageous examples mentioned above.
  • the compounds to be used according to the invention are used in the following way as dopants for a variety of hole-conductors, which in turn are utilized for the construction of certain microelectronic or optoelectronic components, such as for example an OLEO.
  • the dopants may be simultaneously evaporated side by side with the hole-transport materials of the matrix under high vacuum (about 2 ⁇ 10 ⁇ 4 Pa) at high temperatures.
  • a typical substrate evaporation rate for the matrix material is 0.2 nm/s (thickness about 1.5 g/cm 3 ).
  • Evaporation rates for the dopants may vary between 0.001 and 0.5 nm/s at like assumed thickness, in each instance according to the desired doping ratio.
  • the evaporation temperatures of the compounds in a substrate evaporation means are indicated in the following, where F4TCNQ, under otherwise identical conditions, has an evaporation temperature of 80° C. in order to deposit, in the same specific unit of time (e.g. five seconds) the same layer thickness (e.g. 1 nm) on the substrate as the dopants used according to the invention.
  • the evaporation temperature T(evap.) is 85° C.
  • the two components matrix and dopant were deposited from vapor under vacuum in a ratio of 50:1.
  • the conductivity is 2.4 ⁇ 10 ⁇ 2 s/cm. Results are shown in FIG. 1 and Table 1 below.
  • the evaporation temperature T(evap.) is 118° C.
  • the layer was vapor-deposited under vacuum at the ratio of 1:25 (dopant matrix).
  • a conductivity of 4.9 ⁇ 10 ⁇ 4 s/cm was measured there. Results are shown in FIG. 3 and Table 3 below.
  • TABLE 3 Layer thickness Current (nm) (nA) 5 1.1648 10 4.7852 15 9.7211 20 15.582 25 21.985 30 28.866 35 35.45 40 42.249 45 49.747 50 57.86 55 66.012 60 74.335 65 82.449 70 90.251 75 97.968 80 106.14 85 114.58 90 122.84 95 131.1 100 139.59
  • the evaporation temperature T(evap.) is 122° C.
  • Dopant and matrix were vapor-deposited in the ratio of 1:25 on the carrier under vacuum.
  • a conductivity of 2 ⁇ 10 ⁇ 3 s/cm was obtained. Results are shown in FIG. 4 and Table 4 below.
  • TABLE 4 Layer thickness Current (nm) (nA) 5 6.4125 10 26.764 15 52.096 20 79.286 25 107.22 30 135.36 35 165.63 40 199.68 45 234.01 50 267.59 55 300.85 60 333.18 65 365.28 70 397.44 75 431.58 80 464.29 85 498.18 90 529.63 95 560.48 100 590.82
  • the evaporation temperature T(evap.) is 170° C.
  • the layer was vapor-deposited under vacuum at a ratio of 1:25 (dopant matrix).
  • a conductivity of 4.5 ⁇ 10 ⁇ 4 s/cm was measured. Results are shown in FIG. 5 and Table 5 below.
  • TABLE 5 Layer Thickness Current (nm) (nA) 10 0.94 15 2.43 20 4.46 30 9.84 40 16.33 50 23.66 60 31.54 70 39.6 80 47.5 90 56 100 63.5
  • the evaporation temperature T(evap.) is 140° C.
  • the layer was vapor-deposited under vacuum at the ratio of 1:25 (dopant matrix). A conductivity of 2.8 ⁇ 10 ⁇ 5 s/cm was measured there. Results are shown in FIG. 6 and Table 6 below. TABLE 6 Layer Thickness Current (nm) (nA) 50 1.12 55 1.49 60 1.89 65 2.32 70 2.88 75 3.56 80 4.25 85 5 90 5.9 95 6.94 100 8.1

Abstract

The invention relates to the use of an organic mesomeric compound as organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof. In order to be able to handle organic semiconductors more easily in the production process and to be able to produce electronic components with doped organic semiconductors more reproducibly, a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative may be used as a mesomeric compound, which under like evaporation conditions has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ).

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • The present application is a continuation application of U.S. patent application Ser. No. 10/792,133, filed Mar. 3, 2004, which claimed priority to German Patent Application No. 103 57 044.6, filed Dec. 4, 2003, both of which are incorporated herein by reference in their entirety.
  • BACKGROUND OF THE INVENTION
  • The invention relates to the use of an organic mesomeric compound as an organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof, a doped semiconducting matrix material, and an electronic component made of the latter.
  • The doping of silicon semiconductors has already been state of art for several decades. By this method, an increase in conductivity, initially quite low, is obtained by generation of charge carriers in the material as well as, depending upon the type of dopant used, a variation in the Fermi level of the semiconductor.
  • However, several years ago it was also disclosed that organic semiconductors may likewise be strongly influenced with regard to their electrical conductivity by doping. Such organic semiconducting matrix materials may be made up either of compounds with good electron-donor properties or of compounds with good electron-acceptor properties. For doping electron-donor materials, strong electron acceptors such as tetracyanoquinonedimethane (TCNQ) or 2,3,5,6-tetrafluorotetracyano- 1,4-benzoquinonedimethane (F4TCNQ) have become well known. M. Pfeiffer, A. Beyer, T. Fritz, K. Leo, Appl. Phys. Lett., 73 (22), 3202-3204 (1998) and J. Blochwitz, M. Pfeiffer, T. Fritz, K. Leo, Appl. Phys. Lett., 73 (6), 729-731 (1998). By electron transfer processes, these produce so-called holes in electron donor-like base materials (hole-transport materials), owing to the number and mobility of which the conductivity of the base material is relatively significantly varied. For example, N,N′-perarylated benzidines TPD or N,N′,N″ perarylated starburst compounds, such as the substance TDATA, but also certain metal phthalocyanines, such as in particular zinc phthalocyanine ZnPc, are known as matrix materials with hole-transport properties.
  • However, the compounds previously investigated have disadvantages for technical use in the production of doped semiconducting organic layers or of suitable electronic components with doped layers of this kind. The manufacturing processes in large technical production plants or those on a technical scale cannot always be precisely controlled, requiring high control and regulation expenses during processing in order to obtain the desired product quality, or to undesirable tolerances of the products. In addition, there are disadvantages associated with the use of previously known organic donors with regard to electronic component structures, such as light-emitting diodes (OLEDs), field-effect transistors (FETs) or solar cells themselves due to production difficulties related to handling of dopants. The electronic components may exhibit undesirable heterogeneities or the electronic components may exhibit undesirable aging effects. In addition, care has to be taken to see that the dopants used have appropriate electron affinities and other properties suitable for the particular application, since under certain conditions the dopants also help to determine the conductivity or other electrical properties of the organic semiconducting layer.
  • The object of the invention is to prepare organic dopants for doping organic semiconductors which are easier to handle during the production process and which result in electronic components whose organic semiconducting materials are capable of being produced reproducibly.
  • SUMMARY OF THE INVENTION
  • The invention relates to the use of an organic mesomeric compound as organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof. In order to be able to handle organic semiconductors more easily in the production process and to be able to produce electronic components with doped organic semiconductors more reproducibly, a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative may be used as a mesomeric compound, which under like evaporation conditions has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ).
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 shows the doping of ZnPc with N,N′-dicyano-2,3,5,6-tetrafluoro-1,4-quinonediimine (F4DCNQI).
  • FIG. 2 shows the doping of ZnPc with N,N′-dicyan-2,5-dichloro-1,4-quinonediimine (C12DCNQI).
  • FIG. 3 shows the doping of ZnPc with N,N′-dicyano-2,5-dichloro-3,6-difluoro-1,4-quinonediimine (C12F2DCNQI).
  • FIG. 4 shows the doping of ZnPc with N,N′-dicyano-2,3,5,6,7,8-hexafluoro-1,4-naphtho-quinonediimine (F6DCNNOI).
  • FIG. 5 shows the doping of ZnPc with 1,4,5,8-tetrahydro-1,4,5,8-tetrathia-2,3,6,7-tetracyano-anthraquinone (CN4TTAQ).
  • FIG. 6 shows the doping of ZnPc with 2,2,7,7-tetrafluoro-2,7-dihydro-1,3,6,8-tetraoxa-2,7-dibora 4,9,10,11,12-pentachloro-benzo[e]pyrene.
  • DETAILED DESCRIPTION OF THE INVENTION
  • The present invention relates to an organic mesomeric compound usable as an organic dopant, which is a quinone or quinone derivative, in particular an unsubstituted, substituted or anellated quinone or quinone derivative, or a 1,3,2-dioxaborine or 1,3,2-dioxaborine derivative, in particular, an unsubstituted, substituted or anellated 1,3,2-dioxaborine or 1,3,2-dioxaborine derivative and which under like conditions of evaporation has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ). The quinone derivatives of the present invention are, in particular, quinoid systems in which one, two or more quinoid oxygen atoms is/are replaced by a mesomerically and/or inductively electron-attracting, double bond-bonded substituent, in particular, by one of the substituents indicated below. Inductively electron-attracting is to be understood as those residues, which with respect to carbon, have an inductive effect on unsaturated hydrocarbons. Due to high evaporation temperature and low volatility under similar conditions, production processes can be controlled better and carried out with less effort and greater reproducibly. The preparation of quinones and their derivatives or 1,3,2-dioxaborines and their derivatives as dopants permit sufficient electrical conductivity of the organic semiconducting matrix with favorable electron affinity of the dopants in the respective components at low coefficients of diffusion, which ensure component structures remaining constant over time. In addition, charge-carrier injection of contacts into the doped layer can be improved by the dopants. Additionally, the doped organic semiconducting material and the resulting electronic component, because of the compounds used according to the invention, can have improved long-term stability. This relates, for example, to a reduction in the dopant concentration with time. In addition, this relates to the stability of the doped layer, which is located adjacent to undoped layers of an electrooptical component, resulting in electrooptical components with high long-term stability of electrooptical properties, such as luminous yield at a given wavelength, efficiency of a solar cell or the like.
  • Preferred refinements follow from the dependent claims.
  • Here volatility may be determined as the evaporation rate measured under like conditions, for example, a pressure of 2×10−4 Pa and a specified evaporation temperature of 150° C. Alternatively, the volatility may be determined as the evaporation rate of a substrate measured as layer thickness growth per unit of time (nm/s) under otherwise like conditions. The volatility of the compounds according to the present invention is ≦0.95 times or 0.9 times, preferably ≦0.8 times, more preferably ≦0.5 times, even more preferably ≦0.1 times or ≦0.05 times or ≦0.01 times that of F4TCNQ or less.
  • The evaporation rate of the substrate with the compounds according to the present invention may be determined, for example, by the use of a quartz thickness monitor, as is customarily used for example in the production of OLEDs. In particular, the ratio of the evaporation rates of matrix materials and dopants may be measured by independent measurements thereof with the use of two separate quartz thickness monitors to adjust the doping ratio.
  • The volatility relative to that of F4TCNQ may in each instance be referred to that of the pure compound or to the volatility in a given matrix material, for example ZnPc.
  • It goes without saying that the compounds used according to the present invention preferably are procured in such a way that they evaporate relatively or practically undecomposed. Under certain circumstances, however, precursors may alternatively be selectively used as dopant sources, which release the compounds used according to the present invention, for example acid addition salts, a volatile or non-volatile inorganic or organic acid, or charge-transfer complexes thereof, where the acids or electron donors preferably are not or are only slightly volatile or the charge-transfer complex itself works as dopant.
  • The dopant preferably is selected in such a way that under otherwise like conditions, such as doping concentration, molar ratio of dopant matrix, layer thickness, and current, in a given matrix material (for example, zinc phthalocyanine or another matrix material mentioned further below) generates a conductivity just as high as or preferably higher than F4TCNQ. Such a conductivity may be a conductivity (s/cm) greater than or equal to 1.1 times, 1.2 times or greater than/equal to 1.5 times or two times that of F4TCNQ as dopant.
  • The dopant used according to the present invention preferably is selected in such a way that the semiconducting organic matrix material doped with the dopant, after a temperature change from 100° C. to room temperature (20° C.) still has ≧20%, preferably ≧30%, more preferably ≧50% or 60% of the conductivity (s/cm) of the value at 100° C.
  • According to the present invention, a variety of quinone derivatives and in addition 1,3,2-dioxaborines may be used as dopants for the said preferred hole-transport materials HT.
  • Quinoid Structures
  • In quinonoid compounds used according to the present invention, one, two, three or four or all quinoid ═O groups of the quinoid compound, which may represent an ortho or para-quinoid system, where alternatively mixed ortho-para quinoid systems may occur in multinuclear quinoid systems, may be selected from the group, as they are defined below for the substituents S1 to S11, S13 to S21, optionally alternatively without S1, the substituents being defined below.
  • For a quinoid compound used according to the invention, one, two, three, four or more or all substituents for a quinoid ═O group may be selected from the group consisting of S1-S11, S14-S16, optionally alternatively without S1, or be selected from the group consisting of S1, S5-S14 and S16, optionally alternatively without S1, or be selected from the group consisting of S3, S4, S6-S10, S15, S16, optionally alternatively without S1.
  • Alternatively, for a quinoid compound used according to the invention one, two, three, four or more or all substituents for a quinoid ═O group may be selected from the group consisting of S1, S5, S7-S9, S11, S14, S16-21, optionally alternatively without S1, or from the group S1, S5, S8, S9, S11, S14, S16, S18, optionally alternatively without S1.
  • In particular, one, two, three, four or more or all substituents for a quinoid group ═O may be ═C(CN)2 or ═N(CN) or ═N(NO2)2 or ═C(CN) (C(O)R) or ═N(C(O)R). Preferably one, two, three or four or more or all quinoid substituents of the quinoid system contain a mesomerically linked —NO2 and/or —C(O)R group.
  • Compounds having the following basic quinoid skeletons may be used according to the invention.
    Figure US20050139810A1-20050630-C00001
    Figure US20050139810A1-20050630-C00002
    Figure US20050139810A1-20050630-C00003
    Figure US20050139810A1-20050630-C00004
    Figure US20050139810A1-20050630-C00005
    Figure US20050139810A1-20050630-C00006

    where in compounds 3, 3b, 3c, m may be 0, 1, 2, 3, 4 to 6 or greater, and where in addition, in compounds 25-27 the substituent Z of a group M may be alike or unlike another substituent X, Y, V, W,
      • where in compound 25 the two groups M or for M equals ═C=Z the two groups Z may be alike or unlike, and where in compound 32 preferably one or both groups M are not ═C=Z.
  • It goes without saying that the compounds indicated in each instance may comprise all stereoisomers, in particular syn and anti isomers, providing that these are sterically possible in each instance.
  • Here the substituents T, U, V, W, X, Y and Z preferably represent mesomeric and/or referred to carbon or a hydrocarbon, in particular a saturated hydrocarbon, inductively attracting double bond-bonded substituents.
  • In particular, for compounds 1-33 the substituents T, U, V, W, X, Y and/or Z may in each instance be unlike or alike and be selected from the group consisting of:
    Figure US20050139810A1-20050630-C00007
    Figure US20050139810A1-20050630-C00008

    where R preferably is an organic residue or hydrogen. R17 may in particular alternatively be —CF3, or perfluoroalkyl, in particular with C1-C6. If the substituent is S17, X and Y of the substituent S17 preferably are not again S17 and/or S18 to S21.
  • The substituents T, U, V, W, X and/or Z in compounds 1-33 may in particular in each instance be alike or unlike and be selected from the group consisting of
    Figure US20050139810A1-20050630-C00009

    where R preferably is an organic residue or hydrogen, while R17 of group S8 in particular may alternatively be —CF3 or in general perfluoroalkyl, in particular with C1 to C6. In particular, one, two, three, four or all of the substituents may be selected from this group. In particular, X and Y may be alike or unlike and X or Y or X and Y may be selected from this group. In particular, V and W may be alike or unlike and V or W or V and W may be selected from this group.
  • The substituents T, U, V, W, X, Y and/or Z in compounds 1 to 33 may in each instance be alike or unlike and be selected from the group consisting of
    Figure US20050139810A1-20050630-C00010

    where R preferably is an organic residue or hydrogen, while R17 of group S8 in particular may alternatively be —CF3 or in general perfluoroalkyl, in particular with C1 to C6. In particular, one, two, three, four or all of the substituents may be selected from this group. In particular, X and Y may be alike or unlike and X or Y or X and Y may be selected from this group. In particular, V and W may be the alike or unlike and V or W or V and W may be selected from this group.
  • The substituents T, U, V, W, X, Y and/or Z in compounds 1 to 33 may in each instance be alike or unlike and may be selected from the group consisting of
    Figure US20050139810A1-20050630-C00011

    where R preferably is an organic residue or hydrogen, while R17 of the group S8 in particular may alternatively be —CF3 or in general perfluoroalkyl, in particular with C1 to C6. In particular, one, two, three, four or all of the substituents may be selected from this group. In particular, X and Y may be alike or unlike and X or Y or X and Y may be selected from this group. In particular, V and W may be alike or unlike and V or W or V and W may be selected from this group.
  • The substituents T, U, V, W, X, Y and/or Z in compounds 1 to 33 may alternatively in each instance be alike or unlike and be selected from the group consisting of S1, S5, S7-S9, S11, S14, S16-21, optionally alternatively without S1, or from the group S1, S5, S8, S9, S11, S14, S16, S18, optionally alternatively without S1. In particular, one, two, three, four or all of the substituents may be selected from this group. In particular, X and Y may be alike or unlike and X or Y or X and Y may be selected from this group. In particular, V and W may be alike or unlike and V or W or V and W may be selected from this group.
  • The following relationships between the substituents may apply to compounds 1 to 33. The following substituent relationships may in particular apply to the group of substituents S1 to S21. The following substituent relationships may apply to the group of substituents S1 to S11, S14 to S16. The following substituent relationships may apply to the group of substituents S1, S5-S14, S16. The following substituent relationships may apply to the group S3, S4, S6-10, S15, S16.
  • X and/or Y may not or may not simultaneously be ═O or ═C(CN)2. This applies in particular to a mononuclear quinoid dopant, whose substituents preferably form or represent one or no aromatic ring system. In particular, this may apply to the compounds 1 and 20. V and/or W may not or may not simultaneously be ═O or ═C(CN)2.
  • Preferably, in the compound used according to the invention, in each instance ═X and ═X are alike and/or ═U and =T are alike and/or ═V and ═W are alike.
  • The substituents AA and BB preferably are in each instance alike, and may alternatively be unlike one another.
  • At least one or two of the substituents in the group ═X, ═Y, ═U, ═V, =T, ═W, =Z or all substituents in the said group may be unlike ═O. ═X and ═Y may be unlike ═O.
  • Preferably, at least one or two of the substituents in the group ═X, ═Y, ═U, ═V, =T, ═W, =Z or all substituents in the group are unlike ═S.
  • Preferably at least one or both substituents in the group ═X and ═Y are unlike ═S.
  • At least one or two of the substituents in the group ═X and ═Y, ═U, ═V, =T, ═W, =Z or all substituents in the group may unlike ═C(CN)2.
  • At least one or both substituents in the group ═X and ═Y may be unlike ═C(CN)2.
  • Preferably at least one or both substituents in the group ═X and ═Y are ═N(CN). Preferably, one or both substituents ═V and ═W are ═N(CN) and/or one or both substituents ═U and =T are ═N(CN).
  • Preferably at least one or both substituents in the group ═X and ═Y and/or one or both substituents in the group ═V and ═W equal ═N(NO2).
  • Preferably at least one or both substituents in the group ═X and ═Y and/or one or both substituents in the group ═V and ═W equal ═NR, where R may alternatively be —CF3 or in general perfluoroalkyl, in particular with C1-C6.
  • Preferably at least one or both substituents in the group ═X and ═Y and/or one or both substituents in the group ═V and ═W equal ═N(C(O)R18.
  • Preferably at least one or both substituents in the group ═X and ═Y and/or one or both substituents in the group ═V and ═W equal ═C(NO2)2.
  • Preferably at least one or both substituents in the group ═X and ═Y and/or one or both substituents in the group ═V and ═W equal ═C(C(O)R13) (C(O)R14).
  • Preferably at least one or both substituents in the group ═X and ═Y and/or one or both substituents in the group ═V and ═W equal ═C(CF3)2 or in general ═C(perfluoroalkyl) 2, in particular with C1-6.
  • Preferably at least one or two or more or all substituents in the group ═X, ═Y═U═V=T═W=Z equal ═N(CN)
  • Preferably at least one or two or more or all substituents in the group ═X, ═Y, ═U, ═V, =T, ═W =Z equal ═C(CN2)2 or contain a NO2 group conjugated with the quinoid system.
  • Preferably at least one or two or more or all substituents in the group ═X, ═Y, ═U, ═V, =T, ═W, =Z equal ═N(NO2).
  • Preferably at least one or two or more or all substituents in the group ═X, ═Y, ═U, ═V, =T, ═W, =Z are ═NR, where R may in particular alternatively be —CF3 or perfluoroalkyl with in particular C1-6.
  • Preferably at least one or two or more or all substituents in the group ═X, ═Y, ═U, ═V, =T, ═W, =Z are ═N(C(O)R18).
  • Preferably at least one or two or more or all substituents in the group ═X, ═Y, ═U, ═V, =T, ═W, =Z are ═C(C(O)R13) (C(O)R14) or contain a C(O)R group conjugated with the quinoid system.
  • Preferably at least one or two or more or all substituents in the group ═X, ═Y, ═U, ═V, =T, ═W, =Z are ═C(CF3)2 or in general ═C(perfluoroalkyl)2, in particular with C1-6.
  • In particular, for the compounds 1-31 X may be ═Y in each instance or all substituents X, Y, U, V, T, W, Z may be alike, without being limited thereto. Correspondingly, in a quinoid compound generally all quinoid substituents may be alike.
  • Optionally, X or Y or X and Y are not O, in particular for the compounds 1 or 20 or for compounds with only one quinoid ring. Optionally, X or Y or X and Y are not S, in particular for the compounds 1 or 20. Optionally, X or Y or X and Y are not ═C(CN)2, in particular, for compounds 1 or 20. This applies in particular to a compound with only one 6-membered quinoid ring, in particular, a ring with 6 C atoms.
  • If the compound has at least one or two or more quinoid =0 groups and/or ═S groups, as applied to one of the compounds 1 to 33, to T, U, V, W, X, Y or Z, in particular in the case when X or Y or X and Y is O or S, the quinoid ring, in particular when only one quinoid ring is present, preferably with at least one or at least two aryl residues, of which one, more or all may alternatively have heteroatoms, is anellated or substituted.
  • The substituents AA and/or BB are double-bond, mesomerically and/or inductively electron-attracting substituents, preferably selected from the following group
    Figure US20050139810A1-20050630-C00012
    Figure US20050139810A1-20050630-C00013

    where optionally other suitable divalent, in particular including double-bond, substituents may alternatively be used. R28 may in particular alternatively be —CF3 or another perfluoroalkyl group, preferably with C1-6.
  • The compound according to the present invention may represent a quinoid system with a quinoid ring and 1, 2 or 3 or more anellated and/or in each instance aromatic rings forming a residue R. The aromatic rings may in each instance have one or more heteroatoms and be substituted or unsubstituted. The quinoid system may be an ortho or para quinoid system. The quinoid system may in particular be selected from the group of compounds 1-33, without being limited thereto. One, two, three or more or all of the aromatic rings may alternatively be alike or unlike by a group -M1-C(R) ═C(R)═C(R)-M2- or -M1-C(=Z)-M2- with M1, M2 and be selected from the group —O—, —S—, —NR—.
  • The invention also comprises compounds with a quinoid system of two rings of 5 or 6 ring atoms in each instance, which may be anellated with 1, 2, 3,4, 5 or 6 or more aromatic rings and/or be substituted with formation of a residue R. The aromatic rings may be substitute or unsubstituted.
  • The rings in each instance preferably have 6 atoms, which may be 6 carbon atoms. In one or more rings or in each compound as a whole, 1, 2, 3 or 4 or more C atoms may be replaced by heteroatoms such as O, S, N. A variety of quinoid systems may be anellated, mesomerically bonded by one or more double or triple bonds, which may be C—C bonds or heteroatom-C— bonds, or otherwise linked. The bond may in particular be selected from the group of compounds 1-33, without being limited thereto. One, two, three or more or all of the aromatic rings may alternatively be alike or unlike M1, M2 by a group -M1-C(R) ═C(R)-M2 or -M1-C(=Z)-M2- and be selected from the group —O—, —S—, —NR—.
  • In addition, the present invention relates to compounds having 3 or 4 quinoid rings of 5 or 6 atoms independent of one another in each instance, which may have 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10 anellated aromatic rings or forming a residue R with 6 atoms. The aromatic rings may be substituted or unsubstituted. Of the carbon atoms of a ring, a plurality of rings or the compound as a whole 1, 2, 3 or 4 atoms may be heteroatoms such as O, N or P. The compound may in particular be selected from the group of compounds 1-33, without being limited thereto. One, two, three or more or all of the aromatic rings may alternatively be alike or unlike M1, M2 by a group -M1-C(R) ═C(R)-M2 or -M1-C(=Z)-M2- and be selected from the group —O—, —S—, —NR—.
  • Irrespective thereof, the compounds used according to the present invention may have 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10 aryl residues, of which preferably at least one, more or especially preferably all are anellated with one or more quinoid systems and/or with one another, and/or form the residues R. The aromatic rings may be substituted or unsubstituted. Here heteroaryl residues are also to be understood as aryl residues. The aryl residues may in each instance link two quinoid rings to one another, preferably with mesomeric linkage of the quinoid rings. The quinoid system may be selected from the group of compounds 1-33, without being limited thereto. One, two, three or more or all of the aromatic rings may alternatively be alike or unlike M1, M2 by a group -M1-C(R)═C(R)-M2 or -M1-C(=Z)-M2- and be selected from the group —O—, —S—, —NR—. Thus, for example, in the compounds 4, 22 or 23 in each instance 2 or 3 or more (hetero)aryl rings may be located between the quinoid rings, bridging them.
  • The aromatic rings of the said quinoid systems and/or the groups -M1-C(R)═C(R)-M2 or -M1-C(=Z)-M2- are preferably perhalogenated, in particular perfluorinated or percyano-substituted. Preferably no additional non-aromatic and/or non-quinoid rings are contained.
  • Irrespective thereof, the compounds used according to the present invention may have 2, 3, 4, 5 or 6 or more quinoid ring systems. Preferably, one, more or all of the quinoid rings are 5 or 6-membered. Ring carbon atoms may be replaced by heteroatoms. At least two, more or all of the quinoid rings may be anellated together with mesomeric linkage to form a larger quinoid system or be mesomerically linked by one or more bridges or not linked with formation of a larger mesomeric system. The compound may in particular be selected from the group of compounds 1-33, without being limited thereto. The quinoid system may in particular be selected from the group of compounds 1-33, without being limited thereto. One, two, three or more or all of the aromatic rings may alternatively be alike or unlike M1, M2 by a group -M1-C(R)═C(R)-M2 or -M1-C(=Z)-M2- and be selected from the group —O—, —S—, —NR—.
  • The substituents A, B, K, D, E, F, G, H of the compounds 14 and 15 may be unlike or alternatively alike and assume the following structures, imionitrogen ═N—, phosphine ═P— or the substituted methylene carbon ═C═R1-8.
  • It is understood that in all compounds according to the invention, a plurality or all N atoms may in each instance be replaced by P atoms.
  • In particular, the following compounds with the following substitution patterns may be used according to the invention:
  • The compounds 1, 2, 3(m=0), 3(m=1), 3(m=3), 3(m=4), 3b(m=1), 3b(m=2), 3b(m=3), 3b(m=4), 3c(m=1), 3c(m=2), 3c(m=3), 3c(m=4), 6, 7, 10, 11, 11a, 14, 15, 16, 17, 18, 19, 20, 21 (for M unlike ═C=Z), 26 (for M unlike ═C=Z), 27 (for M like —O—, —S—, —NR— or ═C=Z with Z=S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14, S15, S16, S17, S18, S19, S20 or S21), 28 (for U═S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14, S15, S16, S17, S18, S19, S20 or S21), 30 (with M equal to —O—, —S—, —NR— or ═C=T with T═S1, S2, S3, S4, S5, S6, S7, S8, S8, S10, S11, S12, S13, S14, S15, S16, S17, S18, S19, S20 or S21), 32, 33 have the following concrete substitution patterns in each instance, where to each one of the compounds in succession is assigned the substituent X of a first line and the substituent Y below it of the following line
      • with X and Y in each instance as follows:
      • X: S1, S1, S1, S1, S1, S1, S1, S1, S1, S1, S1, S1, S1, S
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S1, S1, S1, S1, S1, S1, S1
      • Y: S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S2, S2, S2, S2, S2, S2, S2
      • Y: S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12,S13, S14
      • X: S3, S3, S3, S3, S3, S3, S3
      • Y: S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S4, S4, S4, S4, S4, S4, S4, S4, S4, S4, S4, S4, S4, S4
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S4, S4, S4, S4, S4, S4, S4
      • Y: S15, S16, S17, S18, S19, S20, S21
      • Or with X and Y in each instance as follows:
      • X: S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S5, S5, S5, S5, S5, S5, S5
      • Y: S15, S16, S17, S18, S19, S20, S21
      • Or with X and Y in each instance as follows:
      • X: S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S6, S6, S6, S6, S6, S6, S6
      • Y: S15, S16, S17, S18, S19, S20, S21
      • Or with X and Y in each instance as follows:
      • X: S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S7, S7, S7, S7, S7, S7, S7
      • Y: S15, S16, S17, S18, S19, S20, S21
      • Or with X and Y in each instance as follows:
      • X: S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S8, S8, S8, S8, S8, S8, S8
      • Y: S15, S16, S17, S18, S19, S20, S21
      • Or with X and Y in each instance as follows:
      • X: S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S9, S9, S9, S9, S9, S9, S9
      • Y: S15, S16, S17, S18, S19, S20, S21
      • Or with X and Y in each instance as follows:
      • X: S10, S10, S10, S10, S10, S10, S10, S10, S10, S10, S10, S10
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S10, S10, S10, S10, S10, S10, S10, S10, S10
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S11, S11, S11, S11, S11, S11, S11, S11, S11, S11, S11, S11
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S11, S11, S11, S11, S11, S11, S11, S11
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, S12
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S12, S12, S12, S12, S12, S12, S12, S12
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S13, S13, S13, S13, S13, S13, S13, S13, S13, S13, S13, S13
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S13, S13, S13, S13, S13, S13, S13, S13
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, S14
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S14, S14, S14, S14, S14, S14, S14, S14
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S15, S15, S15, S15, S15, S15, S15, S15, S15, S15, S15, S15
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S15, S15, S15, S15, S15, S15, S15, S15
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, S16
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S16, S16, S16, S16, S16, S16, S16, S16
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, S17
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S17, S17, S17, S17, S17, S17, S17, S17
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, S18
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S18, S18, S18, S18, S18, S18, S18, S18
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S19, S19, S19, S19, S19, S19, S19, S19, S19, S19, S19, S19
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S19, S19, S19, S19, S19, S19, S19, S19
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S20, S20, S20, S20, S20, S20, S20, S20, S20, S20, S20, S20
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S20, S20, S20, S20, S20, S20, S20, S20
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and Y in each instance as follows:
      • X: S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, S21
      • Y: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S21, S21, S21, S21, S21, S21, S21, S21
      • Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
  • The compounds 4, 5, 5b, 5c, 8, 9, 12, 21 (where 2 residues M are equal to V and W), 22, 23, 24, 24a, 24b, 25 and 26 (for M unlike ═C=Z), 27 (for M unlike ═C=Z), 29, 31 have the following concrete substitution patterns in each instance, where to each one of the compounds in succession is assigned the substituent X of a first line and the substituent V below it of the following line, as indicated at the beginning of the line in each instance.
      • with X ═Y and V ═W
      • and with X and V as follows:
      • X: S1, S1, S1, S1, S1, S1, S1, S1, S1, S1, S1, S1, S1, S1
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S1, S1, S1, S1, S1, S1, S1
      • V: S15, S16, S17, S18, S19, S20, S21
  • or with X and V as follows:
      • X: S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S2, S2, S2, S2, S2, S2, S2
      • V: S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S3, S3, S3, S3, S3, S3, S3
      • V: S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S4, S4, S4, S4, S4, S4, S4, S4, S4, S4, S4, S4, S4, S4
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S4, S4, S4, S4, S4, S4, S4
      • V: S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S5, S5, S5, S5, S5, S5, S5
      • V: S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S6, S6, S6, S6, S6, S6, S6
      • V: S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7
      • V: S1,S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S7, S7, S7, S7, S7, S7, S7
      • V: S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8
      • V: S1,S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S8, S8, S8, S8, S8, 8, S8
      • V: S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14
      • X: S9, S9, S9, S9, S9, S9, S9
      • V: S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S10, S10, S10, S10, S10, S10, S10, S10, S10, S10, S10, S10
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S10, S10, S10, S10, S10, S10, S10, S10, S10
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S11, S11, S11, S11, S11, S11, S11, S11, S11, S11, S11, S11
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S11, S11, S11, S11, S11, S11, S11, S11
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, S12
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S12, S12, S12, S12, S12, S12, S12, S12
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S13, S13, S13, S13, S13, S13, S13, S13, S13, S13, S13, S13
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S13, S13, S13, S13, S13, S13, S13, S13
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, S14
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S14, S14, S14, S14, S14, S14, S14, S14
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S15, S15, S15, S15, S15, S15, S15, S15, S15, S15, S15, S15
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S15, S15, S15, S15, S15, S15, S15, S15
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, S16
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S16, S16, S16, S16, S16, S16, S16, S16
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, S17
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S17, S17, S17, S17, S17, S17, S17, S17
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, S18
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S18, S18, S18, S18, S18, S18, S18, S18,
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S19, S19, S19, S19, S19, S19, S19, S19, S19, S19, S19, S19
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S19, S19, S19, S19, S19, S19, S19, S19, S19
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S20, S20, S20, S20, S20, S20, S20, S20, S20, S20, S20, S20
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S20, S20, S20, S20, S20, S20, S20, S20, S21
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
      • or with X and V as follows:
      • X: S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, S21
      • V: S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12
      • X: S21, S21, S21, S21, S21, S21, S21, S21, S21
      • V: S13, S14, S15, S16, S17, S18, S19, S20, S21
  • The invention in addition comprises the said compounds 4, 5, 5b, 5c, 8, 9, 12, 21 (where 2 residues M are equal to V and W), 22, 23, 24, 24a, 24b, 25 and 26 (for M unlike ═C =Z), 27 (for M unlike ═C =Z), 29, 31 when for the substituents X═V and Y═W with the concrete substitution patterns when in the tables mentioned above V is replaced by Y for these compounds and when to each one of the compounds in succession is assigned the substituent X of a first line and the substituent Y below it of the following line.
  • The invention in addition comprises the said compounds 4, 5, 5b, 5c, 8, 9, 12, 21 (where 2 residues M are equal to V and W), 22, 23, 24, 24a, 24b, 25, and 26 (for M unlike ═C=Z), 27 (for M unlike ═C=Z), 29, 31 when for the substituents X═W and Y═V with the concrete substitution patterns when to each one of the compounds following is assigned the substituent X of a first line and the substituent Y below it of the following line.
  • In the compounds 21, 25 and 26 both residues may here be alike or independent of one another: —S—, —O—, —NR— or ═C=Z with Z═S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14, S15, S16, S17, S18, S19, S20 or S21.
  • The residues R1 to R32 may be alike or unlike and be selected from the group consisting of hydrogen, halogen, (in particular —F, —C1), cyano, nitro, nitroso, sulfamide (unsubstituted or substituted, in particular C1-C6 mono or dialkyl substituted), carboxy, C1-C7 carbalkoxy, C1-C7 sulfo, sulfohalogen (in particular —F or —C1), halogen carbonyl (in particular —F or —C1), carbamoyl (unsubstituted or substituted, in particular C1-C6 N monosubstituted or alike or independently of one another N—C1-C6 disubstituted), formyl, amidineformyl, C1-C6 alkylsulfanyl, C1-C6 alkylsulfonyl, C1-C25 hydrocarbon, preferably C1-C14 hydrocarbon or C1 to C10 or C1 up to 6 hydrocarbon, where one or more or all of the carbon atoms of the group may be substituted with one or more of the above-mentioned residues, where the hydrocarbon may be saturated, unsaturated or an aromatic hydrocarbon. The hydrocarbon groups may in each instance in particular be perhalogenated, perchlorinated or perfluorinated (in particular trifluoromethyl). The hydrocarbon groups may be linear or branched or cyclic, for example cyclohexyl or cyclopentyl. One or more carbon atoms may in each instance be replaced by heteroatoms, in particular N, O, S, —(O)S(O)— or P(R). The (hetero) hydrocarbon residues may be cyclically linked with one another or with a quinoid or other ring, for example a (hetero)aryl ring.
  • In particular, the residues R1 to R32 may be one of the groups acetyl-, trifluoroacetyl-, benzoyl-, pentafluorobenzoyl-, naphthoyl- or alkoxycarbonyl-, where the alkyl residue may be an alkyl with one up to six or to ten, in particular up to four, C atoms linked together unbranched or branched, as well as trialkyl-phosphoryl with alkyl residues, which likewise may consist of a chain with up to five or six or eight carbon atoms linked together unbranched or branched or cyclically or triarylphosphoryl with aryl residues with preferably 6 to 14 C atoms, in particular up to 10 C atoms. In addition, the residues R1-R32, which may be alike or unlike, may be either aryl or heteroaryl, such as for example phenyl, naphthyl, anthranyl, pyridyl, quinoxalyl, pyrazoyl, oxazolyl, 1,3,2-dioxaborinyl or 1,3,4 oxdiazolyl, which may be substituted either by hydrogen or an aryl of low molecular weight with one to eight saturated carbon atoms, which may be linked together unbranched or branched or cyclically, preferably however by halogen, primarily fluorine or chlorine, trichloromethyl, perfluoroalkyl with one to six carbon atoms, in particular trifluoromethyl, but alternatively by cyano, nitro, nitroso, sulfo, carboxyl, carbalkoxy, halogen carbonyl, carbamoyl, formyl, amidineformyl, alkylsulfanyl and alkylsulfonyl, where here again the alkyl residues may consist of a chain with up to five or six or up to eight carbon atoms linked together unbranched or branched or cyclically, as well as by trialkylphosphoryl with alkyl residues, which likewise may consist of a chain with up to five or six or up to eight carbon atoms linked together unbranched or branched. In particular, the aryl or heteroaryl residues may be perhalogenated, in particular perfluorinated.
  • The residues R2, R3, R4, R5, R6 in the compounds 3, 3b, 3c or formulas IV, V or VI may be alike or unlike for unlike n or m.
  • The residues R1 to R32, which are linked with a quinoid or aromatic system of a compound used according to the invention and are arranged adjacent to one another and are separated by two, three or four atoms of the quinoid or aromatic skeletal structure, may be linked together with formation of a carbocyclic, in particular aromatic ring, or heterocyclic, in particular heterocarbocyclic ring. This applies in particular to the compounds 1 to 33, but alternatively to other quinones or quinone derivatives used according to the invention. This applies for example pairwise in each instance, alternatively or simultaneously to the residues R1, R2 and/or R3, R4 of the compounds 1, 3, 3b, 7, 8, 9, 10, 11, 12, 23, 24, 25, 27, 28, the residues R1, R2; R2, R3; R4, R5 and/or R5, R6 of compound 2, the residues R1, R2; R3, R4; R5, R6; R7, R8 of compound 3, the residues R5, R6; R7, R8 of compounds 28, 29 or others. The bridging groups of atoms may in particular form a group that is selected from
      • -L1-C(R1)═C(R2)-L with L=0, S, NR or CR14R15,
      • or —C(X)C(Y)—C(R1)═C(R2)═
      • or —C(═X)C(R3)═C(R4)—C(═Y)—
      • or —C(═X)-L-C(═Y) with L=0, S, NR, CR14R15
      • with X and Y as defined above and preferably selected from the group
        Figure US20050139810A1-20050630-C00014

        where the residues R13 of the various groups may be unlike. The bridging groups of atoms may in particular be provided when X and/or Y are=0 or =8 or ═C(CN)2. In particular, L may then be -0- or -8- or —NR—.
  • However, every two adjacent residues from R1-R32 may alternatively be linked together by a carboxy —(CO)— or a carbimide group —(CNR)—, where the analogous substitution pattern applies for this R as for R1-R30. However, it is alternatively possible that two adjacent residues R are linked together by carbon atoms or heteroatoms in such a way that a new carbocyclic or heterocyclic element is fused to the respective basic cyclic skeleton. For example, in compound type 1 the residues R1 and R2 as well as R3 and R4 stand for a fused benzo or naphtho residue, but alternatively for a fused thiophene, furan, 1,3,4-oxdiazole, pyridine, pyrazine, triazine, tetrazine, pyrane, thiopyrane, dithiine, phosphorine, phthalic acid anhydride, phthalic acid imide or dithiazole residue, where these residues again may be exclusively or partially substituted by additional electron-attracting groupings, such as halogen, including preferably fluorine or chlorine, trifluoromethyl or cyano, nitro, nitroso, sulfo, carboxy, carbalkoxy, halogen carbonyl, carbamoyl, formyl, amidineformyl. The same applies, mutatis mutandis, to the residues R1 and R2 or R2 and R3 or for the residues R4 and R5 or R5 and R6 in compound type 2 as well as to the residues R1 and R2, R3 and R4, R5 and R6 as well as R7 and R8 in compound type 3, as well as to the residues R2 and R3 or R5 and R6 in the compound types 4 and 5, as well as to the corresponding pairs of residues R of the other compounds, which are close enough together to form a 5 or 6-membered ring.
  • The bridged trans-diketo form of compound 8 may for example result in the structures 28 or 29. In the formula 26 the carboxylic acid anhydride acid may alternatively be replaced by a substituted nitrogen group ═N—R1 and hence form a carboxylic acid imide structure.
  • The aromatic residues, with which the quinoid systems may be substituted and/or anellated, may be perhalogenated, in particular perfluorinated, perchlorinated or perfluorochlorinated. Optionally a number, for example up to one-half or more, of the halogen atoms may be replaced by hydrogen. The same may also alternatively or simultaneously apply to the residues R of the quinoid systems. Instead of halogen atoms, CN groups may alternatively be provided on the aromatic residues and/or the quinoid systems.
  • Two quinoid systems Ch1 and Ch2 may in each instance be linked together with formation of a compound Ch1-ZB—Ch2 by a residue ZB, where the quinoid residues Ch1 and Ch2 may be linked together mesomerically or be mesomerically independent of one another. The quinoid residues Ch1 and Ch2 may be alike or unlike and may be selected from the group of compounds 1 to 4 and 5 to 33, while optionally additional quinoid systems may alternatively be linked together, for example with formation of structures such as Ch1-ZB1-Ch2-35 ZB2-Ch3, where Ch1, Ch2, Ch3 may be alike or unlike and may in each instance represent the compounds 1 to 4 and 5 to 33, without being limited thereto. ZB 1 and ZB2 may be alike or unlike.
  • The bridges -Z- may have 1, 2 to 4, up to 6 or up to 10 or alternatively more bridge atoms, which may be carbon atoms or at least in part heteroatoms.
  • When two quinoid compounds, as in formulas 5, 5b or 5c, are linked together by a residue Z, this bridge -Z- may consist of alkenylene, haloalkenylene, acetylene, alkylene, haloalkylene, in particular perfluoroalkylene with one to eight saturated carbon atoms, which may be linked together unbranched or branched, or of arylene, hetarylene, which may be substituted either with hydrogen or with alkyl residues of low molecular weight with one to six or up to eight saturated carbon atoms, which may be linked together unbranched or branched or cyclically, preferably however with halogen, primarily fluorine or chlorine, trichloromethyl, perfluoroalkyl with one to six carbon atoms, there in particular trifluoromethyl, but alternatively cyano, nitro, nitroso, sulfo, carboxy, carbalkoxy, halocarbonyl, carbamoyl, formyl, amidineformyl, alkylsulfanyl and alkylsulfonyl, where the alkyl residues here again may consist of a chain with up to eight carbon atoms linked together unbranched or branched or cyclically, as well as trialkylphosphoryl with alkyl residues, which likewise consist of a chain with up to eight carbon atoms linked together unbranched or branched, may be substituted. The alkenylene group and the alkylene group may have one or more multiple C—C bonds. The bridge atoms of group Z may consist only of unsaturated carbon atoms or heteroatoms, where the said groups may be unsubstituted or substituted. The bridge atoms of group Z may consist only of saturated or aromatic carbon or heteroatoms, while the said groups may be unsubstituted or substituted, so that the two quinoid systems may be mesomerically linked together.
  • The bridge -Z- may comprise one or more groups, in particular the groups below in the form -(Z)n-, for example with n equal to 1, 2, 3 or 4 or more, which in each instance may be alike or unlike one another.
  • Z may be selected from the group consisting of
    Figure US20050139810A1-20050630-C00015

    and/or selected from the group consisting of
    Figure US20050139810A1-20050630-C00016

    and/or selected from the group consisting of
    Figure US20050139810A1-20050630-C00017

    where the bridges indicated alternatively include substituted bridges such as for example —NR—, —(C═X)—, —CR1=CR2-, and/or selected from the group consisting of carboxy —(CO)—, carbimide —(CNR)—, thiophenylene, furanylene 1,3,4,-oxdiazolylene, triazine, tetrazinylene, pyranylene, thiopyranylene, dithiinylene, phosphorinylene, phthalic acid anhydride, phthalic acid imide and dithiazole residues.
  • The aromatic rings or carbon or heterobridges indicated may in each instance be substituted or unsubstituted. X may be a singly or doubly substituted carbon atom, a singly substituted nitrogen atom or =0 or ═S, preferably selected from one of the groups or subgroups listed above.
  • The residues R1 and R2 may be unlike the residues R1 and R2 of the basic structures of compounds 1 to 33.
  • In addition, it is possible for the two quinoid structures to be linked together directly in any way.
  • Preparation of Quinoid Structures
  • All syntheses of quinoid compounds described below are hereby fully included in the present invention by reference thereto and are covered by it.
  • The corresponding substitution patterns are frequently produced in the product to be oxidized. 1,4-quinones may best be prepared by oxidation of the corresponding hydroquinone (W. T. Sumerford, D. N. Dalton, J. Am. Chem. Soc. 1944, 66, 1330; J. Miller, C. Vasquez, 1991 Patent US506836; K. Koch, J. Vitz, J. Prakt. Chem. 2000, 342/8825-7) or the fluorinated and/or chlorinated aromatic compounds (A. Roedig et al., Chem. B. 1974, 107, 558-65; 0. T. Osina, V. D. Steingarz, Zh. Org. Chem. 1974, 10, 329; V. D. Steingarz et al., Zh. Org. Chim. 1970, 6/4, 833).
  • 1,3-indanedione compounds have been synthesized by V. Khodorkovsky et al. (V. Khodorkovsky et al., Tetrahedron Lett. 1999, 40,4851-4).
  • N,N′-dicyano-1,4-quinonediimines are accessible either by the action of N,N′-bistrimethylsilylcarbodiimide on 1,4-quinone compounds (A. Aümuller, S. Hünig, Liebigs Ann. Chem., 1986, 142-64) or by oxidation of appropriate N,N′-dicyano-1,4-diamine compounds (G. D. Adreetti , S. Bradamante, P. C. Pizzarri, G. A. Pagani, Mol. Cryst. Liq. Cryst. 1985, 120, 309-14), where the N,N′-dicyano-1,4-diamine compounds may be obtained by cyanization of phenylene-1,4-diamine with cyanohalogenides or by desulfurization of corresponding thiourea derivatives.
  • Simple tetracyanoquinone dimethanes may be prepared via 1,4-cyclo-hexanedione by condensation in benzene with ammonium acetate buffer on the water separator and subsequent oxidation by bromine (D. S. Acker, W. R. Hertler, J. Am. Chem. Soc. 1962, 84, 3370). In addition, Hertler and co-workers showed that these compounds are capable of being synthesized via 1,4-xylene and its analogs by side-chain bromination, substitution by means of cyanide, condensation with carbonic diethyl ester, conversion of the carboxylic acid methyl ester groupings to cyanide groups and then oxidation (J. Org. Chem. 1963, 28, 2719).
  • Acceptor-substituted tetracyanoquinonedimethanes may be prepared from the sodium salt of t-butyl-malonic acid dinitrile and acceptor-substituted 1,4-dihalogen aromatic compounds (R. C. Wheland, E. L. Martin, J. Org. Chem., 1975,40,3101).
  • In addition, tetracyanoquinonedimethanes have been prepared from 1,4-dihalogen aromatic compounds Pd-catalyzed with malodinitrile anion and subsequent oxidation (S. Takahashi et al., Tetrahedron Letters, 1985, 26, 1553).
  • Chinoide 1,4-polyphenylene E. A. Shalom, J. Y. Becker, I. Agranat, Nouveau Journal de Chimie 1979, 3, 643-5.
  • Heteroanellated quinones have been prepared by the multiple-step synthesis pathway. (B. Skibo et al., J. Med. 1991, 34, 2954-61; H. Bock, P. Dickmann, H. F. Herrmann, Z. Naturforsch. 1991, 46b, 326-8, J. Druey, P. Schmidt, Helv. Chim. Acta 1950, 140, 1080-7).
  • Bridged quinoid compounds have been prepared by M. Matstoka, H. Oka, T. Kitao, Chemistry Letters, 1990, 2061-4; J. Dieckmann, W. R. Hertler, R. E. Benson, J. A. C. S. 1963, 28, 2719-24; K. Takahashi, S. Tarutani, J. C. S. Chem. Comm. 1994, 519-20; N. N. Woroschzov, W. A. Barchasch, Doklady Akad. SSSR 1966, 166/3, 598.
  • Anellated TCNQ compounds have been prepared by M. Matsuoka, H. Oka, T. Kitao, Chemistry Letters, 1990, 2061-4; B. S. Ong, B. Koeshkerian, J. Org. Chem. 1984, 495002-3.
  • Pyrazino-TCNQ compounds may be prepared via 5,8-diiodoquinoxalines palladium-catalyzed with the sodium salt of malodi nitril. (T. Miyashi et al., J. Org. Chem. 1992, 57, 6749-55).
  • Pyrazino-TCNQ compounds as well as other heteroanellated derivatives may be prepared in a variety of ways (Y. Yamashita et al., Chemistry Letters, 1986, 715-8, F. Wudl et al., J. Org. Chem. 1977, 421, 666-7).
  • Anellated DCNQI compounds may be synthesized via the corresponding quinones according to Hünig (J. Tsunetsuga et al., Chemistry Letters, 2002, 1004-5).
  • Heteroanellated DCNQI compounds may be synthesized via the corresponding quinones according to Hünig (T. Suzuki et al., J. Org. Chem. 2001, 66, 216-24; N. Martin et al., J. Org. Chem. 1996, 61, 3041-54; K. Kobayashy et al., Chemistry Letters, 1991, 1033-6; K. Kobayashy, K. Takahashi, J. Org. Chem. 2000, 65, 2577-9).
  • Heterocyclic quinoid derivatives may be prepared according to N. F. Haley, J. C. S. Chem. Comm. 1979, 1031, F. Weyland, K. Henkel Chem. B. 1943, 76, 818; H. J. Knackmuss, Angew. Chem. 1973, 85, 16; K. Fickentscher, Chem. B. 1969, 102, 2378-83, D. E. Burton et al., J. Chem. Soc. (C) 1968, 1268-73.
  • Quinoid structures with unlike residues X, Y have been synthesized by a variety of working groups (T. Itoh, N. Tanaka, S. Iwatsuki, Macromolecules 1995, 28, 421-4; J. A. Hyatt, J. Org. Chem. 1983, 48 129-31; M. R. Bryce et al., J. Org. Chem. 1992, 57, 1690-6; A. Schonberg, E. Singer, Chem. Ber. 1970, 103, 3871-4; S. Iwatsuki, T. Itoh, H. Itoh, Chemistry Letters, 1988, 1187-90; T. Itoh, K. Fujikawa, M. Kubo, J. Org. Chem. 1996, 61, 8329-31; S. Iwatsuki, T. Itoh, T. Sato, T. Higuchi, Macromolecules, 1987, 20, 2651-4; T. Itoh et al., Macromolecule 2000, 33, 269-77; B. S. Ang, B. Koeshkerian, J. Org. Chem. 1984, 495002-3; H. Junek, H. Hambock, B. Hornischer, Mh. Chem. 1967, 98, 315-23; P. W. Pastors et al., Doklady Akad. SSSR 1972, 204, 874-5; A. R. Katritzky et al., Heterocyclic Chem. 1989, 26, 1541-5; N. N. Vorozhtsov, V. A. Barkash, S. A. Anichkina, Doklady Akad. SSSR 1966, 166, 598).
  • Tetracetylquinonemethane compounds and their reduced forms may be obtained via 1,4-benzoquinone and acetylacetone (J. Jenik, Chemicky prumys. 198535/601547, R. J. Wikholm, J. Org. Chem. 1985, 50, 382-4; E. Bematek, S. Ramstad, Acta Chem. Scand. 1953, 7, 1351-6).
  • Ditrifluoroacetamides may be prepared by means of trifluoroacetic acid via aromatic 1,4-diamines (R. Adams, J. M. Stewart, J.A.C.S. 1952, 20, 3660-4). The dime may be obtained by oxidation with Pb(IV)-acetate.
  • Additional diimide and amide structures have been prepared by B. C. McKusick et al., J.A.C.S. 1958, 80, 2806-15.
  • Example 1 N,N′-Dicyano-2,5-dichloro-1,4-benzoquinonediimine
  • Suspend 3 units N,N′-dicyano-2,5-dichlorobenzene-1,4-diamine in 200 units glacial acetic acid with stirring at 20° C., add 13 units lead-(IV)-tetraacetate. Stir until all of the starting material is oxidized. Suction off the precipitated yellow/brown product and recrystallize in benzene. Yield: 64%, m.p.: 225° C.
  • Example 2 N,N′-Dicyano-2,3,5,6-tetrafluoro-1,4-benzoquinonediimine
  • 1.5 units 2,3,5,6-tetrafluoro-1,4-benzoquinone are reacted with 7.6 units titanium tetrachloride in 70 units methylene dichloride. The yellow complex formed is brought to reaction with 7.5 units bis-(trimethylsilyl)-carbodiimide in 15 units methylene dichloride with stirring at room temperature and after 4 h is placed on ice. The aqueous phase is extracted twice with methylene dichloride. The combined organic phases are dried with magnesium chloride, filtered, concentrated to small volume under vacuum and precipitated with petroleum ether and suctioned off anew. The solid obtained is recrystallized in a mixture of toluene/methylcyclohexane. Yield: 48%, m.p.: 205° C.
  • 1,3,2-Dioxaborines
  • In addition, according to the invention, 1,3,2-dioxaborine compounds may be used for doping semiconducting organic materials.
  • The 1,3,2-dioxaborine compounds used according to the invention may have the general formula L
    Figure US20050139810A1-20050630-C00018

    wherein A is a bivalent residue, which may have one or more carbon atoms, which may be partially or completely replaced by heteroatoms, where m=0 or is a whole number greater than 0, for example 1, 2, 3, 4, 5, 6 or greater, for example up to 10 or up to 20, and where X is a monodentate ligand, or two ligands X together may form a bidentate ligand. Here the bridge Am may have up to 6, up to 10 or up to 20 bridge atoms, which link the two 1,3,2-dioxaborine rings together, while the bridge atoms may in particular be carbon atoms and/or heteroatoms.
  • The 1,3,2-dioxaborine compound/s used according to the invention may have the general formula L1
    Figure US20050139810A1-20050630-C00019

    where Q is a trivalent residue and where X is a monodentate ligand or where two ligands X together form a bidentate ligand.
  • In addition, the 1,3,2-dioxaborine compounds used according to the invention may have the general formula LII
    Figure US20050139810A1-20050630-C00020

    which represents a sub-case of the formula L with m=0, where the two 1,3,2-dioxaborines however are linked together mesomerically.
  • In particular, the 1,3,2-dioxaborines proposed here as dopants may have the general formulas 30-33
    Figure US20050139810A1-20050630-C00021

    where in the formulas the various X and/or R1 to R3 may in each instance be alike or unlike one another.
  • The symbols indicated signify the following:
      • the residues X, a monodentate ligand with a preferably electronegative trapped atom, such as for example fluorine, alkoxy, acyloxy, aryloxy or aroyloxy, a bidentate ligand whose trapped atoms preferably represent oxygen, which via a bridge are linked together with unlike groupings of atoms and a variable number of bridge atoms, while preferably a 5 or 6-membered ring is produced by the bridge, at least one atom or all atoms of the bridge preferably being a carbon atom,
      • the residues R1-R6, which in each instance may be independent of one another, either hydrogen, a hydrocarbon group, which optionally may have one or more heteroatoms, in particular an alkyl or cycloalkyl group, which advantageously may be substituted partially or completely by fluorine or chlorine, in particular perhalogenated, especially preferably perfluorinated, and preferably consists of one to six or eight or ten carbon atoms (preferably a maximum of ten carbon atoms), which are linked together either branched or unbranched, an unsubstituted or substituted aryl group Ar, including a heteroaryl group, which likewise may advantageously be substituted by halogen, in particular fluorine or chlorine, in particular perhalogenated, in particular perfluorinated, but alternatively together, in adjacent position to the 1,3,2-doxaborine skeleton with the carbon atoms linking them, may form an aromatic, heteroaromatic or nonaromatic molecular fragment, such as for example a benzo-, naphtho-, anthraceno-, thieno-, furano-, benzothiopheno-, benzofurano-, indolo-, carbazolo, quinolino-, tetrahydronaphtho- or tetrahydroquinolino- fragment, where these fragments may in very flexible fashion be substituted by halogens, such as fluorine or chlorine, as well as by other heteroatom-containing groupings, such as alkyoxy, aryloxy, dialkylamino or diarylamino groupings, the grouping A, either a bond between the 1,3,2-dioxaborine residues or alternatively a bridge with preferably up to ten atoms, where the bridge may have carbon atoms or alternatively heteroatoms such as for example 0, N, S or P, and where the carbon atoms may be replaced partially or completely by heteroatoms. The bridge may optionally have a plurality of or exclusively unsaturated bridge atoms. The bridge preferably represents, like Q, a molecular fragment mediating conjugation between the 1,3,2-dioxaborine residues, for example in that all atoms of the bridge are unsaturated, the grouping Q, either a trivalent residue such as a nitrogen or phosphorus atom, a trialkylene- or triarylene and triheteroaryleneamido- or phosphorus group. The bridge before Q preferably represents a molecular fragment mediating conjugation between the 1,3,2-dioxaborine residues.
  • If the residues X in the compounds of formulas L, LI or LII, in particular in compounds of formula types 30-33, represent a bidentate ligand, they are preferably the residues of organic dicarboxylic acids, such as in particular oxalic acid or malonic acid, succinic acid and glutaric acid, where these dicarboxylic acids, with the exception of the compounds first mentioned, may however be substituted in their alkylene groupings by alkyl or aryl groupings, the residues of aromatic dicarboxylic acids, such as phthalic acid and its derivatives preferably substituted in the ring by halogen, organic hydroxy acids, such as salicylic acid and its ring-substituted derivatives, 1-hydroxy-naphthaline-2-carboxylic acid, 2-hydroxy-naphthaline-1-carboxylic acid, mandelic acid, tartaric acid, benzylic acid and its derivatives substituted in phenyl residues with 1,2-dioxyarene or dioxyhetarene residues, which are derived from catechol and its derivatives substituted in the ring or fused by benzo residues, but alternatively from 3,4-dioxythiophenenes, or residues of cyclic oxodicarboxylic acids, such as quadratic, croconic acid or the like.
  • The groupings A and Q, whose task preferably is the production of conjugation between the individual 1,3,2-dioxaborine residues linking them, may have a great multiplicity of structures and preferably represent a bivalent or trivalent grouping of atoms, such as oxygen, sulfur or nitrogen or a plurality of bivalent or trivalent aryl grouping(s) linked together in conjugative fashion, heteroaryl groupings(s), polyenyl or polymethinyl grouping(s), where the respective groupings may however bear additional substituents, which in particular may be alkyl groups with 1 to 10 carbon atoms, which in addition however may be substituted by fluorine or chlorine, in particular perhalogenated or perfluorinated, unsubstituted or preferably may be aryl or heteroaryl groupings modified by fluorine or chlorine as well as by electron-attracting substituents, where the heteroatoms in the last preferably are oxygen, sulfur or nitrogen and may occur individually as well as alternatively in combination with one another, or else alternatively may be incorporated in suitable bridge groupings, such as cycloalkylene groupings or their heterocyclic analogs.
  • If A or Q symbolizes an aryl grouping, in the case of A the latter advantageously is one or more of the groupings 34-36 and in the case of Q one or optionally alternatively a plurality of the groupings 37-39, where these may be substituted by customary substituents, which preferably bear electronegative trapped atoms, and in the fragments of type 36 the residues R5 and R6, which may be alike or unlike, may be either hydrogen, alkyl or fluorine as well as chlorine, but preferably alternatively may on the whole be a carbon atom substituted by n-, iso- or cycloalkyl groups with 1-10 C atoms, where in compound 35 or 39 n preferably may be a whole number between 1 and 4. W may be a trivalent group or a trivalent atom such as in particular N or P or the group 42, without being limited thereto.
    Figure US20050139810A1-20050630-C00022
  • If A or Q symbolizes a hetaryl group, in the case of A this preferably represents a grouping of the general formula 40 or 41, where optionally in the group A introductions according to formulas 40 and 41 may alternatively occur combined, and in the case of Q a grouping of the general formula 42, in which the residues R7 and R8 may be any desired substituents, such as for example alkyl, aryl or heteroaryl as well as halogen or alkoxy, aryloxy, dialkylamino or diarylamino, and the groupings Z1-Z6 may be bivalent heteroatoms, such as preferably oxygen, sulfur or unsubstituted or substituted nitrogen or phosphorus, and n may be a whole number, preferably between 1 and 4 or 6, in particular 1, 2 or 3.
    Figure US20050139810A1-20050630-C00023
  • The compounds according to the present invention of types 30-33 also include those in which the aforesaid bridge groupings may alternatively be found in combination with one another, such as is the case for example for an oxybiphenylene or thiophenylene unit as well as an aminotriphenylene unit, where linkage with the respective 1,3,2-dioxaborine system in any desired position to the heteroatom, preferably however in 1A-linkage, is possible. The compounds according to the present invention include those in which, in addition to the said bridge groupings A and Q, one of the residues trapped in the 1,3,2-dioxaborine system is drawn into the respective bridge grouping, so that compounds of the general formulas 43-46 are produced, in which the groupings X and R1-R3 have the meanings indicated above and R4 has the meaning corresponding to the residues R1-R3.
    Figure US20050139810A1-20050630-C00024
  • The symbol K stands for a grouping that links the two flanking 1,3,2-dioxaborine-containing molecular structures, preferably links them together conjugatively, which for example is possible by direct fusion of the two flanking groupings or with incorporation of an aryl or hetaryl fragment.
  • The following compounds illustrate, in exemplary fashion, the 1,3,2-dioxaborines usable according to the invention.
    Figure US20050139810A1-20050630-C00025
    Figure US20050139810A1-20050630-C00026
    Figure US20050139810A1-20050630-C00027
    Figure US20050139810A1-20050630-C00028
    Figure US20050139810A1-20050630-C00029
    Figure US20050139810A1-20050630-C00030
  • The compounds 31f to i represent compound of formula type L with m=O.
  • The compounds 30g, 31a to e and 31j represent compounds of formula type L with m=1, where in the case of compound 31 b A is —C(═CR1 R2)- and m is equal to 1, while in the case of compounds 31 d and j A is —CR1═CR2- and m is equal to 1.
  • Compounds 32a and b represent compounds of formula type L 1.
  • Compounds 31 k to n and o, p represent compounds of formula type LII.
  • Preparation of 1,3,2-dioxaborines
  • 1,4-Bis-(2,2-difluoro-4-methyl-1,3,2-dioxaborinyl)-benzole:
    Figure US20050139810A1-20050630-C00031
  • To a solution of 1,4-diacetylbenzole (0.01 mol) in acetic hydride (50 mL) boron trifluoride etherate (10 mL) is added by drops, at room temperature while stirring. After standing overnight the precipitated solid is suctioned off and washed with ether. F. 293-298° C.
  • 5, 7-Bismethoxy-2,2-difluoro-4-methyl-B-(2,2-difluoro-4-methyl-1,3,2-dioxaborinyl)-benzo[d]1,3,2-dioxaborine:
    Figure US20050139810A1-20050630-C00032
  • To a solution of 1,3,5-trimethoxybenzole (0.1 mol) in acetic anhydride (0.9 mol), bortrifluoride/acetic acid (0.3 mol) is added by drops at room temperature with stirring. After standing overnight the precipitated solid is suctioned off, washed with ether and recrystallized in toluene/nitromethane. F. 217-219° C.
  • 2,2,7,7-Tetrafluoro-2,7-dihydro-1,3,6,B-doxa-2,7-diborapyrene:
    Figure US20050139810A1-20050630-C00033
  • 1 g 5,8-dihydroxy-1 A-naphthoquinone and 1.5 ml BF3 etherate were heated in dry toluene for 2 h on a water bath while stirring. After cooling to room temperature, a red-brown crystalline precipitate was deposited, which may be recrystallized in dry glacial acetic acid. F. 163-165° C.
  • 2,2,7, 7-Tetrafluoro-2,7-dihydro-1,3,6,B-doxa-2,7-dibora-benzo[e]pyrene:
    Figure US20050139810A1-20050630-C00034
  • 10 g quinizarine and 10 mL BF3 etherate were heated in dry toluene for 2 h on the water bath with stirring. After cooling to room temperature a red-brown crystalline precipitate is deposited, which may be recrystallized in dry glacial acetic acid. F. 249-251° C.
  • 2,2,8, 8-Tetrafluoro-2, 8-dihydro-1,3,7,9-tetraoxa-2,8-diboraperylene:
    Figure US20050139810A1-20050630-C00035
  • 10 g 1,5-dihydroxy-9,10-anthraquinone and 10 mL BF3 etherate were heated in dry toluene for 2 h on the water bath with stirring. After cooling to room temperature, a red crystalline precipitate is deposited, which may be recrystallized in dry glacial acetic acid. F. >35° C.
  • Tris-[4-(2,2-difluoro-4-methyl-1,3,2-dioxaborinyl)-phenylamine:
    Figure US20050139810A1-20050630-C00036
  • To a solution of triphenylamine (0.1 mol) in acetic anhydride (0.9 mol), bortrifluoride/acetic acid (0.3mol) is added by drops at room temperature with stirring. After standing overnight, the precipitated solid is suctioned off, washed with ether and recrystallized in glacial acetic acid/nitromethane. F. 305-307° C.
  • 1,3,5-Tris-(2,2-difluoro-4-methyl-1,3,2-dioxaborinyl)-benzole:
    Figure US20050139810A1-20050630-C00037
  • To a mixture of acetic anhydride (0.6 mol) and bortrifluoride-acetic acid (0.2 mol), 1,3,5-triacetylbenole (0.05 mol) was slowly added by drops, while stirring at 45° C. The resulting mixture is stirred for another 8 hrs and then allowed to cool. The product precipitated after addition of diethylether (100 mL) is suctioned off, washed with ethyl acetate and recrystallized in nitromethane. F.>360° C.
  • 7,9-Dimethyl-1,4,6,10-tetraoxa-5-bora-spiro[4,5Jdeca-7,9-diene-2,3-dione:
    Figure US20050139810A1-20050630-C00038
  • Acetylacetone (0.1 mol), oxalic acid (0.1 mol) and boric acid (0.1 mol) are heated in toluene (200 mL) until a clear solution is produced and no more water is separated. After cooling, the precipitated product is suctioned off and washed with cyclohexane. F. 187-189° C.
  • 8-Acetyl-7,9-dimethyl-1,4,6,10-tetraoxa-5-bora-spiro[4,5[d]eca-7,9-diene-2,3-dione:
    Figure US20050139810A1-20050630-C00039
  • Triacetylmethane (0.1 mol) and bortrifluoride etherate (0.15 mol) are stirred in ether (200 mL) for 20 hrs at room temperature. Then the precipitated product is suctioned off and washed with cyclohexane. F.>250° C.
  • 2,3-Benzo-7,9-bis-(4-chlorophenyl)-1,4,6,1O-tetraoxa-5-bora-spiro[4,5]deca-7,9-diene:
    Figure US20050139810A1-20050630-C00040
  • Pyrocatechol (0.1 mol), bis-(4-chlorobenzoyl)-methane (0.1 mol), and boric acid (0.1 mol) are heated in toluene (250 mL) until a clear solution is obtained and no more water is separated. After cooling the precipitated product is suctioned off and washed with cyclohexane. F. 312-315° C.
  • Matrix Materials
  • Suitable dopants for organic semiconducting materials, such as hole- transport materials HT, which customarily are used in OLEOs or organic solar cells, are described in the present invention. The semiconducting materials preferably are intrinsically hole-conducting. The following may apply for dopants of the quinone type as well as of the dioxaborine type.
  • The matrix material may consist partially (>10 or >25 wt. %) or substantially (>50 wt. % or >75 wt. %) or completely of a metal phthalocyanine complex, a porphyrin complex, in particular metal porphyrin complex, an oligothiophene, oligophenyl, oligophenylenevinylene or oligofluorene compound, where the oligomer preferably comprises 2-500 or more, preferably 2-100 or 2-50 or 2-10 monomer units. Optionally, the oligomer may alternatively comprise >4, >6 or >10 or more monomer units, in particular alternatively for the regions indicated above, i.e. for example 4 or 6-10 monomer units, 6 or 10-100 monomer units or 10-500 monomer units. The monomers and oligomers may be substituted or unsubstituted, where alternatively block or mixed polymers in the said oligomers of a compound with a triarylamine unit or a spiro-bifluoro compound may be present. The said matrix materials may alternatively be present in combination with one another, optionally alternatively in combination with other matrix materials. The matrix materials may have electron-shifting substituents such as alkyl or alkoxy residues, which have reduced ionization energy or which reduce the ionization energy of the matrix material.
  • The metal phthalocyanine complexes or porphyrin complexes used as matrix materials may have a main group metal atom or a metal atom of the B group. The metal atom Me may in each instance be coordinated 4, 5 or 6 times, for example in the form of oxo (Me=0), dioxo (0=Me=0), imine, diimine, hydroxo, dihydroxo, amino or diamino complexes, without being limited thereto. The phthalocyanine complex or porphyrin complex may in each instance be partially hydrated, where however the mesomeric ring system preferably is not disturbed. The phthalocyanine complexes may contain as central atom for example magnesium, zinc, iron, nickel, cobalt, magnesium, copper or vanadyl (═VO). The same or other metal atoms and oxometal atoms may be present in the case of porphyrin complexes. 101531 In particular, such dopable hole-transport materials HT may be arylated benzidines, for example N,N′-perarylated benzidines or other diamines such as types TFD (where one, more or all of the aryl groups may have aromatic heteroatoms), suitable arylated starburst compounds such as N,N′,N′-perarylated starburst compounds, such as the compound TDA T A (where one, more or all of the aryl groups may have aromatic heteroatoms). The aryl residues may in particular comprise, for each of the compounds mentioned above, phenyl, naphthyl, pyridine, quinoline, isoquinoline, peridazine, pyrimidine, pyrazine, pyrazole, imidazole, oxazol, furan, pyrrole, indole or the like. The phenyl groups of the respective compounds may be partially or completely replaced by thiophene groups.
    Figure US20050139810A1-20050630-C00041
  • Preferably, the matrix material used consists completely of a metal phthalocyanine complex, a porphyrin complex, a compound having a triarylamine unit or a spiro-bifluorene compound.
  • It is understood that other suitable organic matrix materials that have semiconducting properties, in particular hole-conducting materials, may be used.
  • Doping 101561 Doping may in particular take place in such a way that the molar ratio of matrix molecule to dopant, or in the case of oligomeric matrix materials, the ratio of the number of matrix monomers to dopant is 1:100000, preferably 1:1 to 1:10,000, especially preferably 1:5 to 1:1000, for example 1:10 to 1:1 00, for example about 1:50 to 1:100 or alternatively 1:25 to 1:50.
  • Evaporation of Dopants
  • Doping of the respective matrix material, indicated as hole-conducting matrix material HT, with the dopants to be used according to the present invention may be produced by one or a combination of the following methods:
      • a) mixed evaporation under vacuum with one source for HT and one for the dopant;
      • b) sequential deposition of HT and dopant with subsequent in-diffusion of the dopant by heat treatment;
      • c) doping of a HT layer by a solution of dopant with subsequent evaporation of the solvent by heat treatment; and
      • d) superficial doping of a HT layer by a layer of dopant applied to the surface. Doping may be effected in such a way that the dopant is evaporated in a precursor compound that releases the dopant upon heating and/or irradiation. Irradiation may be effected by means of electromagnetic radiation, in particular visible light, UV light or IR light, for example laser light in each instance, or alternatively by other types of radiation. The heat required for evaporation may be substantially provided by irradiation, alternatively the compounds or precursors or compound complexes such as charge-transfer complexes to be evaporated may be irradiated in certain bands, in order to facilitate, for example by conversion into excited states, the evaporation of compounds by dissociation of complexes. It is understood that the evaporation conditions described below are directed to those conditions without irradiation and uniform conditions of evaporation are to be used for purposes of comparison.
  • The following for example may be used as precursor compounds:
      • a) mixtures or stoichiometric or mixed crystalline compounds in the dopant and an inert, non-volatile substance, e.g. a polymer, molecular sieve, aluminum oxide, silica gel, oligomers or other organic or inorganic substance with high evaporation temperature, where the dopant is linked to this substance primarily by van der Waals forces and/or hydrogen bridge linkage;
      • b) mixture or stoichiometric or mixed crystalline compound of the dopant and one relatively electron donor-like, non-volatile compound V, where relatively complete charge transfer occurs between the dopant and the compound V, such as in charge-transfer complexes with relatively electron-rich polyaromatic compounds or heteroaromatic compounds or other organic or inorganic substance with a high evaporation temperature; and
      • c) mixture or stoichiometric or mixed crystalline compound of the dopant and a substance that is evaporated together with the dopant and has an ionization energy like or higher than that of the substance HT to be doped, so that the substance in the organic matrix material forms no traps for holes. According to the present invention, the substance may alternatively be identical with the matrix material, for example, may represent a metal phthalocyanine or benzidine derivative. Additional suitable volatile co-substances, such as hydroquinones, 1,4-phenylenediamines or 1-amino-4-hydroxybenzes or other compounds, form quinhydrones or other charge-transfer complexes.
        Electronic Component
  • Use of the organic compounds according to the present invention for the preparation of doped organic semiconducting materials, which may be arranged, for example, in the form of layers or electrical conduction pathways, permits a multiplicity of electronic components or devices containing them to be produced. In particular, the dopants according to the invention may be used for the production of organic light-emitting diodes (OLEOs), organic solar cells, organic diodes, in particular those with high rectifying behavior such as 103-107, preferably 104-107 or 105-107, or organic field-effect transistors. The dopants according to the present invention allow the conductivity of the doped layers and/or the charge-carrier injection of contacts into the doped layer to be improved. In particular, in OLEOs the component may have a pin structure or an inverse structure, without being limited thereto. However, use of the dopants according to the present invention is not limited to the advantageous examples mentioned above.
  • EXAMPLES
  • The invention is to be explained in detail by several examples.
  • The compounds to be used according to the invention, in particular the compounds indicated above by way of example in the substance class of quinones or 1,3,2-dioxaborines described above, are used in the following way as dopants for a variety of hole-conductors, which in turn are utilized for the construction of certain microelectronic or optoelectronic components, such as for example an OLEO. The dopants may be simultaneously evaporated side by side with the hole-transport materials of the matrix under high vacuum (about 2×10−4 Pa) at high temperatures. A typical substrate evaporation rate for the matrix material is 0.2 nm/s (thickness about 1.5 g/cm3). Evaporation rates for the dopants may vary between 0.001 and 0.5 nm/s at like assumed thickness, in each instance according to the desired doping ratio. The evaporation temperatures of the compounds in a substrate evaporation means are indicated in the following, where F4TCNQ, under otherwise identical conditions, has an evaporation temperature of 80° C. in order to deposit, in the same specific unit of time (e.g. five seconds) the same layer thickness (e.g. 1 nm) on the substrate as the dopants used according to the invention.
  • In the following examples the current measurements were performed over a 1 mm-long and about 0.5 mm-wide path of current in the doped HT material at 1 V. Under these conditions ZnPc conducts practically no electric current.
  • Example 1
  • Doping of ZnPc with N,N′-dicyano-2,3,5,6-tetrafluoro-1,4-quinonediimine (F4DCNQI)
  • The evaporation temperature T(evap.) is 85° C. The two components matrix and dopant were deposited from vapor under vacuum in a ratio of 50:1. Here the conductivity is 2.4×10−2 s/cm. Results are shown in FIG. 1 and Table 1 below.
    TABLE 1
    Layer Thickness Current
    (nm) (nA)
    5 69.05
    10 400.9
    15 762.5
    20 1147
    25 1503.2
    30 1874.4
    35 2233.4
    40 2618
    45 3001.5
    50 3427
  • Example 2
  • Doping of ZnPc with N,N′-dicyan-2,5-dichloro-1,4-quinonediimine (C12DCNQI) the evaporation temperature T(evap.) is 114° C. The ratio of the two compounds in the vapor-deposited layer is 1:50 in favor of the matrix. A conductivity of 1.0×10−2 s/cm was measured in the layer. Results are shown in FIG. 2 and Table 2 below.
    TABLE 2
    Layer Thickness Current
    (nm) (nA)
    5 42.66
    10 179.4
    15 334.2
    20 484
    25 635.5
    30 786
    35 946
    40 1091.5
    45 1253
    50 1409.8
  • Example 3
  • Doping of ZnPc with N,N′-dicyano-2,5-dichloro-3,6-difluoro-1,4-quinonediimine (C12F2DCNQI)
  • The evaporation temperature T(evap.) is 118° C. The layer was vapor-deposited under vacuum at the ratio of 1:25 (dopant matrix). A conductivity of 4.9×10−4 s/cm was measured there. Results are shown in FIG. 3 and Table 3 below.
    TABLE 3
    Layer
    thickness Current
    (nm) (nA)
    5 1.1648
    10 4.7852
    15 9.7211
    20 15.582
    25 21.985
    30 28.866
    35 35.45
    40 42.249
    45 49.747
    50 57.86
    55 66.012
    60 74.335
    65 82.449
    70 90.251
    75 97.968
    80 106.14
    85 114.58
    90 122.84
    95 131.1
    100 139.59
  • Example 4
  • Doping of ZnPc with N,N′-dicyano-2,3,5,6,7,8-hexafluoro-1,4-naphtho-quinonediimine (F6DCNNOI)
  • The evaporation temperature T(evap.) is 122° C. Dopant and matrix were vapor-deposited in the ratio of 1:25 on the carrier under vacuum. A conductivity of 2×10−3 s/cm was obtained. Results are shown in FIG. 4 and Table 4 below.
    TABLE 4
    Layer
    thickness Current
    (nm) (nA)
    5 6.4125
    10 26.764
    15 52.096
    20 79.286
    25 107.22
    30 135.36
    35 165.63
    40 199.68
    45 234.01
    50 267.59
    55 300.85
    60 333.18
    65 365.28
    70 397.44
    75 431.58
    80 464.29
    85 498.18
    90 529.63
    95 560.48
    100 590.82
  • Example 5
  • Doping of ZnPc with 1,4,5,8-tetrahydro-1,4,5,8-tetrathia-2,3,6,7-tetracyano-anthraquinone (CN4TTAQ).
  • The evaporation temperature T(evap.) is 170° C. The layer was vapor-deposited under vacuum at a ratio of 1:25 (dopant matrix). A conductivity of 4.5×10−4 s/cm was measured. Results are shown in FIG. 5 and Table 5 below.
    TABLE 5
    Layer Thickness Current
    (nm) (nA)
    10 0.94
    15 2.43
    20 4.46
    30 9.84
    40 16.33
    50 23.66
    60 31.54
    70 39.6
    80 47.5
    90 56
    100 63.5
  • Example 6
  • Doping of ZnPc with 2,2,7,7-tetrafluoro-2,7-dihydro-1,3,6,8-tetraoxa-2,7-dibora-4,9,10 11,12pentachloro-benzo[e]pyrene.
  • The evaporation temperature T(evap.) is 140° C. The layer was vapor-deposited under vacuum at the ratio of 1:25 (dopant matrix). A conductivity of 2.8×10−5 s/cm was measured there. Results are shown in FIG. 6 and Table 6 below.
    TABLE 6
    Layer Thickness Current
    (nm) (nA)
    50 1.12
    55 1.49
    60 1.89
    65 2.32
    70 2.88
    75 3.56
    80 4.25
    85 5
    90 5.9
    95 6.94
    100 8.1

Claims (6)

1-54. (canceled)
55. Dopand for doping an organic semiconducting matrix material, wherein the dopand is an organic, mesomeric quinon or quinon derivative compound selected from the group consisting of compounds having one of the following structures:
Figure US20050139810A1-20050630-C00042
Figure US20050139810A1-20050630-C00043
wherein in structure (40) R1-R4 is independently Cl, CN, aryl or heteroary, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, CF3, perfluoroalkyl, SO3R and halogen, wherein A and B are selected from
Figure US20050139810A1-20050630-C00044
wherein in structure (41) R1-R8 is independently Cl, F, CN, NO2, perfluoroalkyl, aryl or heteroaryl, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, NO, perfluoroalkyl, S03R, and halogen;
wherein in structure (42) R1-R6 is independently Cl, F, CN, NO2, NO, perfluoroalkyl, aryl or heteroaryl, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, perfluoroalkyl, SO3R and halogen, wherein A and B are selected from the group consisting of
Figure US20050139810A1-20050630-C00045
wherein in structure (43) R1-R8 is independently Cl, F, perfluoroalkyl, CN, NO2, NO, aryl or heteroaryl, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, perfluoroalkyl, SO3R and halogen;
wherein in structure (44) R1-R6 is independently Cl, F, CN, NO2, NO, perfluoroalkyl, aryl or heteroaryl, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, perfluoroalkyl, SO3R and halogen;
wherein in structure (45) R1-R4 is independently Cl, F, NO2, NO, perfluoroalkyl, aryl, or heteroaryl, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, perfluoroalkyl, SO3R and halogen;
wherein in structure (46) R1-R6 is independently Cl, F, CN, NO2, NO, perfluoroalkyl, aryl or heteroaryl, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, perfluoroalkyl, S03R and halogen;
wherein in structure (47) R1-R12 is independently Cl, F, CN, NO2, NO, perfluoroalkyl, aryl or heteroaryl, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, perfluoroalkyl, SO3R and halogen, or wherein R1, R3, R9 and R12 are hydrogen and R2, R4-R8, R10 and R11 is independently Cl, F, CN, NO2, NO, perfluoroalkyl, aryl or heteroaryl, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, perfluoroalkyl, SO3R and halogen;
wherein in structure (48) R1-R12 is independently Cl, F, CN, NO2, NO, perfluoroalkyl, aryl or heteroaryl, wherein aryl and heteroaryl have one or more substituents selected from the group consisting of CN, NO2, perfluoroalkyl, SO3R and halogen;
and wherein the dopand, under like evaporation conditions, has a lower volatility than tetrafluorotetracyano-quinonedimethane (F4TCQ).
56. Dopand according to claim 55, wherein the substituents A, B, C and D in structures (41), and (43) to (48) are the same or different and are selected from the group consisting of:
Figure US20050139810A1-20050630-C00046
57. Dopand according to claim 55 or 56, wherein perfluoroalkyl is CF3, and halogen is fluorine or chlorine.
58. Dopand according to claim 55, wherein the dopand is a quinoid system having a quinoid ring and one, two or three annulated aromatic rings.
59. Dopand according to claim 58, wherein the aromatic rings have one or more hetero atoms.
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Cited By (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007028733A1 (en) * 2005-09-05 2007-03-15 Siemens Aktiengesellschaft Novel materials for improving the hole injection in organic electronic devices and use of the material
WO2007068423A1 (en) * 2005-12-12 2007-06-21 Polyic Gmbh & Co. Kg Redox systems for stabilization and life extension of polymer semiconductors
US20100132770A1 (en) * 2006-02-09 2010-06-03 Beatty Paul H J Device including semiconductor nanocrystals and a layer including a doped organic material and methods
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US20110084258A1 (en) * 2009-10-12 2011-04-14 Tae-Shick Kim Organic light-emitting device
US20110089411A1 (en) * 2008-06-27 2011-04-21 Chuanjun Xia Cross linkable ionic compounds
US9024181B2 (en) 2010-05-04 2015-05-05 Heliatek Gmbh Photoactive component comprising organic layers
US9112163B2 (en) 2010-06-21 2015-08-18 Heliatek Gmbh Photoactive component having a plurality of transport layer systems
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EP3101021A1 (en) 2015-06-01 2016-12-07 Universal Display Corporation Organic electroluminescent materials and devices
EP3124488A1 (en) 2015-07-29 2017-02-01 Universal Display Corporation Organic electroluminescent materials and devices
US9590182B2 (en) 2011-11-25 2017-03-07 Jnc Corporation Benzofluorene compound, material for luminescent layer using said compound and organic electroluminescent device
EP3159350A1 (en) 2015-09-03 2017-04-26 Universal Display Corporation Organic electroluminescent materials and devices
EP3205658A1 (en) 2016-02-09 2017-08-16 Universal Display Corporation Organic electroluminescent materials and devices
EP3231809A2 (en) 2016-04-11 2017-10-18 Universal Display Corporation Organic electroluminescent materials and devices
EP3261146A2 (en) 2016-06-20 2017-12-27 Universal Display Corporation Organic electroluminescent materials and devices
EP3261147A1 (en) 2016-06-20 2017-12-27 Universal Display Corporation Organic electroluminescent materials and devices
EP3270435A2 (en) 2016-06-20 2018-01-17 Universal Display Corporation Organic electroluminescent materials and devices
EP3297051A1 (en) 2016-09-14 2018-03-21 Universal Display Corporation Organic electroluminescent materials and devices
EP3301088A1 (en) 2016-10-03 2018-04-04 Universal Display Corporation Condensed pyridines as organic electroluminescent materials and devices
EP3305796A1 (en) 2016-10-07 2018-04-11 Universal Display Corporation Organic electroluminescent materials and devices
EP3321258A1 (en) 2016-11-09 2018-05-16 Universal Display Corporation 4-phenylbenzo[g]quinazoline or 4-(3,5-dimethylphenylbenzo[g]quinazoline iridium complexes for use as near-infrared or infrared emitting materials in oleds
EP3323822A1 (en) 2016-09-23 2018-05-23 Universal Display Corporation Organic electroluminescent materials and devices
EP3345914A1 (en) 2017-01-09 2018-07-11 Universal Display Corporation Organic electroluminescent materials and devices
EP3354654A2 (en) 2016-11-11 2018-08-01 Universal Display Corporation Organic electroluminescent materials and devices
EP3381927A1 (en) 2017-03-29 2018-10-03 Universal Display Corporation Organic electroluminescent materials and devices
EP3401318A1 (en) 2017-05-11 2018-11-14 Universal Display Corporation Organic electroluminescent materials and devices
EP3418286A1 (en) 2017-06-23 2018-12-26 Universal Display Corporation Organic electroluminescent materials and devices
EP3444258A2 (en) 2017-08-10 2019-02-20 Universal Display Corporation Organic electroluminescent materials and devices
EP3489243A1 (en) 2017-11-28 2019-05-29 University of Southern California Carbene compounds and organic electroluminescent devices
EP3492528A1 (en) 2017-11-30 2019-06-05 Universal Display Corporation Organic electroluminescent materials and devices
EP3613751A1 (en) 2018-08-22 2020-02-26 Universal Display Corporation Organic electroluminescent materials and devices
EP3689889A1 (en) 2019-02-01 2020-08-05 Universal Display Corporation Organic electroluminescent materials and devices
EP3690973A1 (en) 2019-01-30 2020-08-05 University Of Southern California Organic electroluminescent materials and devices
EP3715353A1 (en) 2019-03-26 2020-09-30 Universal Display Corporation Organic electroluminescent materials and devices
US10822363B2 (en) 2016-10-12 2020-11-03 Arizona Board Of Regents On Behalf Of Arizona State University Narrow band red phosphorescent tetradentate platinum (II) complexes
EP3750897A1 (en) 2019-06-10 2020-12-16 Universal Display Corporation Organic electroluminescent materials and devices
US10886478B2 (en) 2014-07-24 2021-01-05 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate platinum (II) complexes cyclometalated with functionalized phenyl carbene ligands and their analogues
EP3771717A1 (en) 2019-07-30 2021-02-03 Universal Display Corporation Organic electroluminescent materials and devices
EP3778614A1 (en) 2019-08-16 2021-02-17 Universal Display Corporation Organic electroluminescent materials and devices
US10944064B2 (en) 2014-11-10 2021-03-09 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate metal complexes with carbon group bridging ligands
EP3816175A1 (en) 2019-11-04 2021-05-05 Universal Display Corporation Organic electroluminescent materials and devices
US11011712B2 (en) 2014-06-02 2021-05-18 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate cyclometalated platinum complexes containing 9,10-dihydroacridine and its analogues
EP3845545A1 (en) 2020-01-06 2021-07-07 Universal Display Corporation Organic electroluminescent materials and devices
US11063228B2 (en) 2017-05-19 2021-07-13 Arizona Board Of Regents On Behalf Of Arizona State University Metal-assisted delayed fluorescent emitters employing benzo-imidazo-phenanthridine and analogues
EP3858945A1 (en) 2020-01-28 2021-08-04 Universal Display Corporation Organic electroluminescent materials and devices
US11101435B2 (en) 2017-05-19 2021-08-24 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate platinum and palladium complexes based on biscarbazole and analogues
US11114626B2 (en) 2012-09-24 2021-09-07 Arizona Board Of Regents On Behalf Of Arizona State University Metal compounds, methods, and uses thereof
US11183670B2 (en) 2016-12-16 2021-11-23 Arizona Board Of Regents On Behalf Of Arizona State University Organic light emitting diode with split emissive layer
US11189808B2 (en) 2013-10-14 2021-11-30 Arizona Board Of Regents On Behalf Of Arizona State University Platinum complexes and devices
EP3937268A1 (en) 2020-07-10 2022-01-12 Universal Display Corporation Plasmonic oleds and vertical dipole emitters
EP3978583A1 (en) 2020-10-02 2022-04-06 Universal Display Corporation Organic electroluminescent materials and devices
US11329244B2 (en) 2014-08-22 2022-05-10 Arizona Board Of Regents On Behalf Of Arizona State University Organic light-emitting diodes with fluorescent and phosphorescent emitters
US11335865B2 (en) 2016-04-15 2022-05-17 Arizona Board Of Regents On Behalf Of Arizona State University OLED with multi-emissive material layer
EP4001287A1 (en) 2020-11-24 2022-05-25 Universal Display Corporation Organic electroluminescent materials and devices
EP4001286A1 (en) 2020-11-24 2022-05-25 Universal Display Corporation Organic electroluminescent materials and devices
EP4016659A1 (en) 2020-11-16 2022-06-22 Universal Display Corporation Organic electroluminescent materials and devices
EP4019526A1 (en) 2018-01-26 2022-06-29 Universal Display Corporation Organic electroluminescent materials and devices
EP4039692A1 (en) 2021-02-03 2022-08-10 Universal Display Corporation Organic electroluminescent materials and devices
EP4053137A1 (en) 2021-03-05 2022-09-07 Universal Display Corporation Organic electroluminescent materials and devices
EP4056578A1 (en) 2021-03-12 2022-09-14 Universal Display Corporation Organic electroluminescent materials and devices
EP4059915A2 (en) 2021-02-26 2022-09-21 Universal Display Corporation Organic electroluminescent materials and devices
EP4059941A1 (en) 2021-03-15 2022-09-21 Universal Display Corporation Organic electroluminescent materials and devices
EP4060758A2 (en) 2021-02-26 2022-09-21 Universal Display Corporation Organic electroluminescent materials and devices
US11472827B2 (en) 2015-06-03 2022-10-18 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate and octahedral metal complexes containing naphthyridinocarbazole and its analogues
EP4074723A1 (en) 2021-04-05 2022-10-19 Universal Display Corporation Organic electroluminescent materials and devices
EP4075531A1 (en) 2021-04-13 2022-10-19 Universal Display Corporation Plasmonic oleds and vertical dipole emitters
EP4075530A1 (en) 2021-04-14 2022-10-19 Universal Display Corporation Organic electroluminescent materials and devices
EP4079743A1 (en) 2021-04-23 2022-10-26 Universal Display Corporation Organic electroluminescent materials and devices
EP4086266A1 (en) 2021-04-23 2022-11-09 Universal Display Corporation Organic electroluminescent materials and devices
EP4112701A2 (en) 2021-06-08 2023-01-04 University of Southern California Molecular alignment of homoleptic iridium phosphors
US11594688B2 (en) 2017-10-17 2023-02-28 Arizona Board Of Regents On Behalf Of Arizona State University Display and lighting devices comprising phosphorescent excimers with preferred molecular orientation as monochromatic emitters
US11594691B2 (en) 2019-01-25 2023-02-28 Arizona Board Of Regents On Behalf Of Arizona State University Light outcoupling efficiency of phosphorescent OLEDs by mixing horizontally aligned fluorescent emitters
EP4151699A1 (en) 2021-09-17 2023-03-22 Universal Display Corporation Organic electroluminescent materials and devices
US11647643B2 (en) 2017-10-17 2023-05-09 Arizona Board Of Regents On Behalf Of Arizona State University Hole-blocking materials for organic light emitting diodes
EP4185086A1 (en) 2017-07-26 2023-05-24 Universal Display Corporation Organic electroluminescent materials and devices
EP4212539A1 (en) 2021-12-16 2023-07-19 Universal Display Corporation Organic electroluminescent materials and devices
US11708385B2 (en) 2017-01-27 2023-07-25 Arizona Board Of Regents On Behalf Of Arizona State University Metal-assisted delayed fluorescent emitters employing pyrido-pyrrolo-acridine and analogues
EP4231804A2 (en) 2022-02-16 2023-08-23 Universal Display Corporation Organic electroluminescent materials and devices
EP4242285A1 (en) 2022-03-09 2023-09-13 Universal Display Corporation Organic electroluminescent materials and devices
US11785838B2 (en) 2019-10-02 2023-10-10 Arizona Board Of Regents On Behalf Of Arizona State University Green and red organic light-emitting diodes employing excimer emitters
EP4265626A2 (en) 2022-04-18 2023-10-25 Universal Display Corporation Organic electroluminescent materials and devices
EP4282863A1 (en) 2022-05-24 2023-11-29 Universal Display Corporation Organic electroluminescent materials and devices
EP4293001A1 (en) 2022-06-08 2023-12-20 Universal Display Corporation Organic electroluminescent materials and devices
EP4299693A1 (en) 2022-06-28 2024-01-03 Universal Display Corporation Organic electroluminescent materials and devices
US11878988B2 (en) 2019-01-24 2024-01-23 Arizona Board Of Regents On Behalf Of Arizona State University Blue phosphorescent emitters employing functionalized imidazophenthridine and analogues
EP4326030A1 (en) 2022-08-17 2024-02-21 Universal Display Corporation Organic electroluminescent materials and devices
US11930698B2 (en) 2014-01-07 2024-03-12 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate platinum and palladium complex emitters containing phenyl-pyrazole and its analogues
US11945985B2 (en) 2020-05-19 2024-04-02 Arizona Board Of Regents On Behalf Of Arizona State University Metal assisted delayed fluorescent emitters for organic light-emitting diodes

Families Citing this family (195)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100377321B1 (en) 1999-12-31 2003-03-26 주식회사 엘지화학 Electronic device comprising organic compound having p-type semiconducting characteristics
KR100721656B1 (en) 2005-11-01 2007-05-23 주식회사 엘지화학 Organic electronic devices
US7560175B2 (en) 1999-12-31 2009-07-14 Lg Chem, Ltd. Electroluminescent devices with low work function anode
US20100026176A1 (en) 2002-03-28 2010-02-04 Jan Blochwitz-Nomith Transparent, Thermally Stable Light-Emitting Component Having Organic Layers
TWI265753B (en) 2004-05-11 2006-11-01 Lg Chemical Ltd Organic electronic device
US7540978B2 (en) * 2004-08-05 2009-06-02 Novaled Ag Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
WO2006015567A1 (en) 2004-08-13 2006-02-16 Novaled Ag Layer arrangement for a light-emitting component
JP2008510312A (en) 2004-08-19 2008-04-03 エルジー・ケム・リミテッド Organic light emitting device including buffer layer and method of manufacturing the same
DE602004006275T2 (en) 2004-10-07 2007-12-20 Novaled Ag Method for doping a semiconductor material with cesium
JP2008530773A (en) * 2005-02-04 2008-08-07 ノヴァレッド・アクチエンゲゼルシャフト Additives to organic semiconductors
DE502005002342D1 (en) * 2005-03-15 2008-02-07 Novaled Ag Light-emitting component
EP2284923B1 (en) 2005-04-13 2016-12-28 Novaled GmbH Assembly for an organic pin-type LED and manufacturing method
EP1729346A1 (en) * 2005-06-01 2006-12-06 Novaled AG Light-emitting device with an electrode arrangement
KR101174871B1 (en) * 2005-06-18 2012-08-17 삼성디스플레이 주식회사 Patterning method for organic semiconductor
EP1739765A1 (en) * 2005-07-01 2007-01-03 Novaled AG Organic light-emitting diode and stack of organic light emitting diodes
US20090015150A1 (en) * 2005-07-15 2009-01-15 Lg Chem, Ltd. Organic light emitting device and method for manufacturing the same
TWI321968B (en) * 2005-07-15 2010-03-11 Lg Chemical Ltd Organic light meitting device and method for manufacturing the same
KR20080043772A (en) * 2005-08-01 2008-05-19 플렉스트로닉스, 인크 Latent doping of conducting polymers
DE102005040411A1 (en) 2005-08-26 2007-03-01 Merck Patent Gmbh New materials for organic electroluminescent devices
DE102005043163A1 (en) 2005-09-12 2007-03-15 Merck Patent Gmbh Connections for organic electronic devices
DE502005009802D1 (en) * 2005-11-10 2010-08-05 Novaled Ag Doped organic semiconductor material
DE502005004675D1 (en) * 2005-12-21 2008-08-21 Novaled Ag Organic component
US7919010B2 (en) * 2005-12-22 2011-04-05 Novaled Ag Doped organic semiconductor material
DE602006001930D1 (en) * 2005-12-23 2008-09-04 Novaled Ag of organic layers
WO2007071450A1 (en) * 2005-12-23 2007-06-28 Novaled Ag Electronic device with a layer structure of organic layers
EP1804308B1 (en) * 2005-12-23 2012-04-04 Novaled AG An organic light emitting device with a plurality of organic electroluminescent units stacked upon each other
EP1803789A1 (en) * 2005-12-28 2007-07-04 Novaled AG Use of metal complexes as emitters in organic light emitting devices and such a device
EP1808909A1 (en) 2006-01-11 2007-07-18 Novaled AG Electroluminescent light-emitting device
CN101371619B (en) 2006-01-18 2013-11-13 Lg化学株式会社 OLED having stacked organic light-emitting units
JP5683104B2 (en) 2006-03-21 2015-03-11 ノヴァレッド・アクチエンゲゼルシャフト Process for the production of doped organic semiconductor materials and formulations used therefor
EP1837927A1 (en) * 2006-03-22 2007-09-26 Novaled AG Use of heterocyclic radicals for doping of organic semiconductors
ATE394800T1 (en) 2006-03-21 2008-05-15 Novaled Ag HETEROCYCLIC RADICAL OR DIRADICAL, THEIR DIMERS, OLIGOMERS, POLYMERS, DISPIR COMPOUNDS AND POLYCYCLES, THEIR USE, ORGANIC SEMICONDUCTIVE MATERIAL AND ELECTRONIC COMPONENT
DE102006013802A1 (en) 2006-03-24 2007-09-27 Merck Patent Gmbh New anthracene compounds useful in organic electronic devices, preferably organic electroluminescent device e.g. integrated organic electroluminescent devices and organic field-effect-transistors
JPWO2007116750A1 (en) * 2006-03-30 2009-08-20 出光興産株式会社 Material for organic electroluminescence device and organic electroluminescence device using the same
DE112007000789B4 (en) * 2006-03-30 2012-03-15 Novaled Ag Use of Bora tetraazepentalene
US7572482B2 (en) * 2006-04-14 2009-08-11 Bae Systems Information And Electronic Systems Integration Inc. Photo-patterned carbon electronics
EP1848049B1 (en) 2006-04-19 2009-12-09 Novaled AG Light emitting device
EP1860709B1 (en) * 2006-05-24 2012-08-08 Novaled AG Use of square planar transition metal complexes as dopants
DE102006031990A1 (en) 2006-07-11 2008-01-17 Merck Patent Gmbh New materials for organic electroluminescent devices
DE102006035018B4 (en) * 2006-07-28 2009-07-23 Novaled Ag Oxazole triplet emitter for OLED applications
DE102006053320B4 (en) * 2006-11-13 2012-01-19 Novaled Ag Use of a coordination compound for doping organic semiconductors
DE102006059509B4 (en) * 2006-12-14 2012-05-03 Novaled Ag Organic light-emitting element
DE102007002714A1 (en) 2007-01-18 2008-07-31 Merck Patent Gmbh New materials for organic electroluminescent devices
DE102007012794B3 (en) 2007-03-16 2008-06-19 Novaled Ag New pyrido(3,2-h)quinazoline compounds useful to prepare doped organic semi-conductor, which is useful in an organic light-emitting diode, preferably organic solar cells, and modules for an electronic circuits, preferably displays
DE102007019260B4 (en) * 2007-04-17 2020-01-16 Novaled Gmbh Non-volatile organic storage element
DE102007018456B4 (en) * 2007-04-19 2022-02-24 Novaled Gmbh Use of main group element halides and/or pseudohalides, organic semiconducting matrix material, electronic and optoelectronic components
EP3457451B1 (en) 2007-04-30 2019-07-17 Novaled GmbH The use of oxocarbon, pseudooxocarbon and radialene compounds
EP1990847B1 (en) * 2007-05-10 2018-06-20 Novaled GmbH Use of quinoid bisimidazoles and their derivatives as dopant for doping an organic semi-conductor matrix material
US8044390B2 (en) * 2007-05-25 2011-10-25 Idemitsu Kosan Co., Ltd. Material for organic electroluminescent device, organic electroluminescent device, and organic electroluminescent display
DE102007024850A1 (en) 2007-05-29 2008-12-04 Merck Patent Gmbh New materials for organic electroluminescent devices
EP2009014B1 (en) * 2007-06-22 2018-10-24 Novaled GmbH Application of a precursor of an n-dopant for doping an organic semi-conducting material, precursor and electronic or optoelectronic component
DE102007031220B4 (en) * 2007-07-04 2022-04-28 Novaled Gmbh Quinoid compounds and their use in semiconducting matrix materials, electronic and optoelectronic components
DE102007037905B4 (en) 2007-08-10 2011-02-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Doped semiconductor material and its use
EP2221896A4 (en) * 2007-11-22 2012-04-18 Idemitsu Kosan Co Organic el element
DE102008011185A1 (en) 2008-02-27 2009-09-03 Osram Opto Semiconductors Gmbh Process for producing a doped organic semiconducting layer
JP5315729B2 (en) * 2008-03-11 2013-10-16 大日本印刷株式会社 Organic device
CN102046598B (en) * 2008-03-31 2015-02-04 科学与工业研究委员会 Novel donor-acceptor fluorene scaffolds: a process and uses thereof
DE102008017591A1 (en) 2008-04-07 2009-10-08 Merck Patent Gmbh New materials for organic electroluminescent devices
DE102008018670A1 (en) 2008-04-14 2009-10-15 Merck Patent Gmbh New materials for organic electroluminescent devices
US8057712B2 (en) * 2008-04-29 2011-11-15 Novaled Ag Radialene compounds and their use
DE102008024182A1 (en) 2008-05-19 2009-11-26 Merck Patent Gmbh Connections for organic electronic device
DE102008033943A1 (en) 2008-07-18 2010-01-21 Merck Patent Gmbh New materials for organic electroluminescent devices
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
DE102008036062B4 (en) 2008-08-04 2015-11-12 Novaled Ag Organic field effect transistor
DE102008036063B4 (en) * 2008-08-04 2017-08-31 Novaled Gmbh Organic field effect transistor
GB2462591B (en) * 2008-08-05 2013-04-03 Cambridge Display Tech Ltd Organic thin film transistors and methods of making the same
DE102008050841B4 (en) 2008-10-08 2019-08-01 Merck Patent Gmbh New materials for organic electroluminescent devices
US8119037B2 (en) * 2008-10-16 2012-02-21 Novaled Ag Square planar transition metal complexes and organic semiconductive materials using them as well as electronic or optoelectric components
KR101777551B1 (en) 2008-10-27 2017-09-11 닛산 가가쿠 고교 가부시키 가이샤 Charge injection and transport layers
DE102009005289B4 (en) 2009-01-20 2023-06-22 Merck Patent Gmbh Materials for organic electroluminescent devices, methods for their production and electronic devices containing them
DE102009005288A1 (en) 2009-01-20 2010-07-22 Merck Patent Gmbh Materials for organic electroluminescent devices
DE102009005290A1 (en) 2009-01-20 2010-07-22 Merck Patent Gmbh Connections for electronic devices
DE102009005746A1 (en) 2009-01-23 2010-07-29 Merck Patent Gmbh Materials for organic electroluminescent devices
KR101705213B1 (en) * 2009-02-26 2017-02-09 노발레드 게엠베하 Quinone compounds as dopants in organic electronics
DE102009023155A1 (en) 2009-05-29 2010-12-02 Merck Patent Gmbh Materials for organic electroluminescent devices
DE102009051142B4 (en) 2009-06-05 2019-06-27 Heliatek Gmbh Photoactive component with inverted layer sequence and method for its production
EP2443213B1 (en) 2009-06-18 2014-04-23 Basf Se Phenanthroazole compounds as hole transporting materials for electro luminescent devices
CN102421858A (en) 2009-06-22 2012-04-18 默克专利有限公司 Conducting formulation
DE102009032922A1 (en) 2009-07-14 2011-01-20 Merck Patent Gmbh Materials for organic electroluminescent devices
DE102010031829B4 (en) 2009-07-21 2021-11-11 Novaled Gmbh Thermoelectric components with thin layers
DE102009034194A1 (en) 2009-07-22 2011-01-27 Merck Patent Gmbh Materials for electronic devices
DE102009034625A1 (en) 2009-07-27 2011-02-03 Merck Patent Gmbh New materials for organic electroluminescent devices
DE102010023619B4 (en) 2009-08-05 2016-09-15 Novaled Ag Organic bottom-emitting device
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
DE102009053644B4 (en) 2009-11-17 2019-07-04 Merck Patent Gmbh Materials for organic electroluminescent devices
KR101097315B1 (en) * 2009-10-12 2011-12-23 삼성모바일디스플레이주식회사 Organic light emitting device
EP2489085A2 (en) 2009-10-14 2012-08-22 Novaled AG Electro-optical organic semiconductor device and method for producing the same
DE102009053191A1 (en) 2009-11-06 2011-05-12 Merck Patent Gmbh Materials for electronic devices
ES2587082T3 (en) 2009-12-16 2016-10-20 Heliatek Gmbh Photoactive building element with organic layers
WO2011076324A1 (en) 2009-12-23 2011-06-30 Merck Patent Gmbh Compositions comprising organic semiconducting compounds
EP2725632B8 (en) 2009-12-23 2017-02-22 Merck Patent GmbH Use of compositions comprising polymeric inert binders for the fabrication of light-emitting diode
DE102010004453A1 (en) 2010-01-12 2011-07-14 Novaled AG, 01307 Organic light emitting component has connection units formed with p-doped and n-doped hole transport layers and n-type and p-type dot layers formed with organic n-dopant and p-dopant materials respectively
DE102010005697A1 (en) 2010-01-25 2011-07-28 Merck Patent GmbH, 64293 Connections for electronic devices
DE102010009903A1 (en) 2010-03-02 2011-09-08 Merck Patent Gmbh Connections for electronic devices
EP2367215A1 (en) * 2010-03-15 2011-09-21 Novaled AG An organic photoactive device
DE102010013068A1 (en) 2010-03-26 2011-09-29 Merck Patent Gmbh Connections for electronic devices
KR101182446B1 (en) * 2010-04-02 2012-09-12 삼성디스플레이 주식회사 Organic light emitting device
US20130026421A1 (en) 2010-04-12 2013-01-31 Merck Patent Gmbh Composition and method for preparation of organic electronic devices
JP2013527980A (en) 2010-04-12 2013-07-04 メルク パテント ゲーエムベーハー Composition with improved performance
DE102010014933A1 (en) 2010-04-14 2011-10-20 Merck Patent Gmbh Materials for electronic devices
CN102892859B (en) * 2010-04-27 2016-03-09 诺瓦莱德公开股份有限公司 Organic semiconductor material and electronic component
CN102822181B (en) * 2010-05-24 2016-03-02 海洋王照明科技股份有限公司 A kind of quinoid silicon fluorenes class organic semiconductor material and its preparation method and application
US9206352B2 (en) 2010-05-27 2015-12-08 Merck Patent Gmbh Formulation and method for preparation of organic electronic devices
DE102010023620B4 (en) 2010-06-14 2016-09-15 Novaled Ag Organic, bottom-emitting device
KR101805144B1 (en) 2010-06-14 2017-12-05 노발레드 게엠베하 Organic light emitting device
DE102010024335A1 (en) 2010-06-18 2011-12-22 Merck Patent Gmbh Connections for electronic devices
DE102010024542A1 (en) 2010-06-22 2011-12-22 Merck Patent Gmbh Materials for electronic devices
EP2586074B1 (en) 2010-06-24 2016-12-28 Basf Se An organic field effect transistor with improved current on/off ratio and controllable threshold shift
US20110315967A1 (en) * 2010-06-24 2011-12-29 Basf Se Organic field effect transistor with improved current on/off ratio and controllable threshold shift
DE102010031979B4 (en) 2010-07-22 2014-10-30 Novaled Ag Semiconductor device, method for its production, use of the semiconductor device and inverter with two semiconductor devices
DE102010033548A1 (en) 2010-08-05 2012-02-09 Merck Patent Gmbh Materials for electronic devices
DE102010048607A1 (en) 2010-10-15 2012-04-19 Merck Patent Gmbh Connections for electronic devices
WO2012092972A1 (en) 2011-01-06 2012-07-12 Heliatek Gmbh Electronic or optoelectronic component comprising organic layers
EP2669262B1 (en) 2011-01-27 2018-03-07 JNC Corporation Novel anthracene compound and organic electroluminescence element using same
TWI526418B (en) 2011-03-01 2016-03-21 諾瓦發光二極體股份公司 Organic semiconductive materials and organic component
KR101970940B1 (en) 2011-05-05 2019-04-22 메르크 파텐트 게엠베하 Compounds for electronic devices
KR101908384B1 (en) 2011-06-17 2018-10-17 삼성디스플레이 주식회사 Organic light-emitting diode and flat display device comprising the same
KR102008034B1 (en) 2011-07-11 2019-08-06 메르크 파텐트 게엠베하 Compositions for organic electroluminescent devices
CN103718317B (en) 2011-08-03 2016-11-16 默克专利有限公司 material for electronic device
US9403795B2 (en) 2011-08-05 2016-08-02 Samsung Display Co., Ltd. Carbazole-based compound and organic light-emitting diode comprising the same
EP2782975B1 (en) 2011-10-27 2018-01-10 Merck Patent GmbH Materials for electronic devices
DE102011055233A1 (en) 2011-11-10 2013-05-16 Novaled Ag Light emitting device for use in planar arrangement of illumination device to emit light in different applications, has electrical line connection electrically connecting contact terminal of light-emitting component with plugs and sockets
EP2780409A4 (en) 2011-11-15 2015-09-16 Basf Se Organic semiconductor device and manufacturing method thereof
JP6081473B2 (en) 2011-11-17 2017-02-15 メルク パテント ゲーエムベーハー Spirodihydroacridine and its use as a material for organic electroluminescent devices
KR101927943B1 (en) 2011-12-02 2018-12-12 삼성디스플레이 주식회사 Organic light-emitting diode comprising multi-layered hole transporting layer, and flat display device including the same
EP2789028B1 (en) 2011-12-06 2019-02-06 Novaled GmbH Organic light emitting device and method of producing
CN103159920B (en) * 2011-12-09 2015-11-25 海洋王照明科技股份有限公司 Anthraquinonyl multipolymer solar cell material and its preparation method and application
KR101927941B1 (en) 2011-12-19 2018-12-12 삼성디스플레이 주식회사 Organic light-emitting diode comprising multi-layered hole transporting layer, and flat display device including the same
DE102012100642B4 (en) 2012-01-26 2015-09-10 Novaled Ag Arrangement with a plurality of organic semiconductor components and method for producing and using the arrangement
US9487618B2 (en) 2012-02-22 2016-11-08 Merck Patent Gmbh Polymers containing dibenzocycloheptane structural units
DE102013203149A1 (en) 2012-03-08 2013-09-12 Olaf Zeika New oligomeric compounds useful in organic electronics, electronic and optoelectronic devices in photocatalytic cleavage of water and sensors or organic Pelletier elements and as p-dopant for doping hole transport layers in displays
TW201341347A (en) 2012-03-15 2013-10-16 Novaled Ag Aromatic amine-terphenyl compounds and use thereof in organic semiconducting components
DE102013205093A1 (en) 2012-03-28 2013-10-02 Olaf Zeika New substituted tetraheterocyclic compounds useful in optoelectronic or electronic components, preferably e.g. organic light-emitting diodes, organic solar cells, dye-sensitized solar cells, batteries and accumulators, and organic diodes
DE102012103448B4 (en) 2012-04-19 2018-01-04 Heliatek Gmbh Method of optimizing serially connected photoactive devices on curved surfaces
DE102012104118B4 (en) 2012-05-10 2021-12-02 Heliatek Gmbh Hole transport materials for optoelectronic components
DE102012104247B4 (en) 2012-05-16 2017-07-20 Heliatek Gmbh Semiconducting organic material for optoelectronic devices
WO2013179223A2 (en) 2012-05-30 2013-12-05 Heliatek Gmbh Solar panel to be arranged on shaped concrete parts
DE102012011335A1 (en) 2012-06-06 2013-12-12 Merck Patent Gmbh Connections for Organic Electronic Devices
SG11201408233SA (en) 2012-06-11 2015-01-29 Heliatek Gmbh Filter system for photoactive components
DE102012105022A1 (en) 2012-06-11 2013-12-12 Heliatek Gmbh System for optimizing energy consumption of e.g. refrigerator in vehicle e.g. hybrid electric car, has photovoltaic module that is arranged in vehicle and is moved in angle-independent manner to generate constant power output
WO2014000860A1 (en) 2012-06-29 2014-01-03 Merck Patent Gmbh Polymers containing 2,7-pyrene structure units
DE102012105812A1 (en) 2012-07-02 2014-01-02 Heliatek Gmbh Electrode arrangement for optoelectronic components
DE102012105809B4 (en) 2012-07-02 2017-12-07 Heliatek Gmbh Organic optoelectronic component with transparent counterelectrode and transparent electrode device
JP6449766B2 (en) 2012-07-02 2019-01-09 ヘリアテク ゲゼルシャフト ミット ベシュレンクテル ハフツングHeliatek Gmbh Transparent electrodes for optoelectronic devices
DE102012105810B4 (en) 2012-07-02 2020-12-24 Heliatek Gmbh Transparent electrode for optoelectronic components
EP2684932B8 (en) 2012-07-09 2016-12-21 Hodogaya Chemical Co., Ltd. Diarylamino matrix material doped with a mesomeric radialene compound
KR102161955B1 (en) 2012-07-10 2020-10-06 메르크 파텐트 게엠베하 Materials for organic electroluminescent devices
KR102284234B1 (en) 2012-07-23 2021-07-30 메르크 파텐트 게엠베하 Derivatives of 2-diarylaminofluorene and organic electronic compounds containing them
KR102155492B1 (en) 2012-07-23 2020-09-14 메르크 파텐트 게엠베하 Fluorenes and electronic devices containing them
EP2875092B1 (en) 2012-07-23 2017-02-15 Merck Patent GmbH Compounds and organic electroluminescent devices
KR102157994B1 (en) 2012-09-11 2020-09-21 고쿠리츠 다이가쿠 호진 교토 다이가쿠 Material for organic electroluminescent elements, organic electroluminescent element, display device, and lighting device
CN104183736A (en) * 2013-05-23 2014-12-03 海洋王照明科技股份有限公司 Organic light emitting device and manufacturing method thereof
WO2015008810A1 (en) * 2013-07-19 2015-01-22 富士フイルム株式会社 Organic film transistor, organic semiconductor film, and organic semiconductor material and use applications thereof
JP5972230B2 (en) * 2013-07-19 2016-08-17 富士フイルム株式会社 Organic thin film transistor, organic semiconductor thin film and organic semiconductor material
JP5972229B2 (en) * 2013-07-19 2016-08-17 富士フイルム株式会社 Organic thin film transistor, organic semiconductor thin film and organic semiconductor material
DE102013110693A1 (en) 2013-09-27 2015-04-02 Heliatek Gmbh Photoactive, organic material for optoelectronic devices
EP3693437B1 (en) 2013-12-06 2021-08-25 Merck Patent GmbH Compounds and organic electronic devices
KR20160094430A (en) 2013-12-06 2016-08-09 메르크 파텐트 게엠베하 Compositions containing a polymeric binder which comprises acrylic and/or methacrylic acid ester units
US10374170B2 (en) 2013-12-06 2019-08-06 Merck Patent Gmbh Substituted oxepines
WO2015086108A1 (en) 2013-12-12 2015-06-18 Merck Patent Gmbh Materials for electronic devices
TWI636056B (en) 2014-02-18 2018-09-21 學校法人關西學院 Polycyclic aromatic compound and method for production the same, material for organic device and application thereof
US10916705B2 (en) 2015-01-30 2021-02-09 Merck Patent Gmbh Formulations with a low particle content
US10629817B2 (en) 2015-05-18 2020-04-21 Merck Patent Gmbh Materials for organic electroluminescent devices
US20180212166A1 (en) 2015-07-15 2018-07-26 Merck Patent Gmbh Composition comprising organic semiconducting compounds
EP3182478B1 (en) 2015-12-18 2018-11-28 Novaled GmbH Electron injection layer for an organic light-emitting diode (oled)
EP3208861A1 (en) 2016-02-19 2017-08-23 Novaled GmbH Electron transport layer comprising a matrix compound mixture for an organic light-emitting diode (oled)
KR101872962B1 (en) 2016-08-31 2018-06-29 엘지디스플레이 주식회사 Organic compound and Organic light emitting diode and organic emitting display device including the same
TW201902891A (en) 2017-04-13 2019-01-16 德商麥克專利有限公司 Composition for organic electronic devices
CN116987108A (en) 2017-05-16 2023-11-03 学校法人关西学院 Polycyclic aromatic compound, material for organic element, composition for forming light-emitting layer, organic electroluminescent element, and device
DE102017111137A1 (en) 2017-05-22 2018-11-22 Novaled Gmbh Organic electroluminescent device
WO2019002198A1 (en) 2017-06-26 2019-01-03 Merck Patent Gmbh Homogeneous mixtures
CN110692146B (en) 2017-06-30 2023-01-13 学校法人关西学院 Organic electroluminescent element, and display device or lighting device
TWI813576B (en) 2017-07-03 2023-09-01 德商麥克專利有限公司 Formulations with a low content of phenol type impurities
EP3649213B1 (en) 2017-07-05 2021-06-23 Merck Patent GmbH Composition for organic electronic devices
WO2019007866A1 (en) 2017-07-05 2019-01-10 Merck Patent Gmbh Composition for organic electronic devices
TWI785142B (en) 2017-11-14 2022-12-01 德商麥克專利有限公司 Composition for organic electronic devices
US11897896B2 (en) 2017-12-13 2024-02-13 Beijing Summer Sprout Technology Co., Ltd. Organic electroluminescent materials and devices
US11466009B2 (en) 2017-12-13 2022-10-11 Beijing Summer Sprout Technology Co., Ltd. Organic electroluminescent materials and devices
CN109912619B (en) 2017-12-13 2022-05-20 北京夏禾科技有限公司 Organic electroluminescent materials and devices
US11466026B2 (en) 2017-12-13 2022-10-11 Beijing Summer Sprout Technology Co., Ltd. Organic electroluminescent materials and devices
WO2019229011A1 (en) 2018-05-30 2019-12-05 Merck Patent Gmbh Composition for organic electronic devices
CN110759919B (en) * 2018-12-06 2021-12-07 广州华睿光电材料有限公司 Pyrene quinone organic compound and application thereof
US20220127286A1 (en) 2019-03-04 2022-04-28 Merck Patent Gmbh Ligands for nano-sized materials
CN113924666A (en) * 2019-08-14 2022-01-11 株式会社Lg化学 Organic light emitting device
CN117042491A (en) 2019-10-17 2023-11-10 北京夏禾科技有限公司 Organic electroluminescent device
KR20220002566A (en) 2019-12-04 2022-01-06 후지 덴키 가부시키가이샤 exhaust gas treatment device
JP7300409B2 (en) 2020-02-27 2023-06-29 株式会社荏原製作所 Water level detection system and exhaust gas treatment device
CN113809246A (en) * 2020-06-15 2021-12-17 Tcl科技集团股份有限公司 Composite material, preparation method thereof and quantum dot light-emitting diode
CN113206201B (en) * 2021-05-13 2022-09-06 南京邮电大学 Method for optimizing lead-free perovskite solar cell thin film
EP4106027A1 (en) * 2021-06-18 2022-12-21 Novaled GmbH Active-matrix oled display
EP4223739A1 (en) 2022-02-02 2023-08-09 Novaled GmbH 3,6-bis(cyanomethylidene)cyclohexa-1,4-diene compounds and their use in organic electronic devices
EP4287811A1 (en) 2022-06-03 2023-12-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2023232967A1 (en) 2022-06-03 2023-12-07 Novaled Gmbh Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
WO2023232972A1 (en) 2022-06-03 2023-12-07 Novaled Gmbh Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device
EP4333591A1 (en) 2022-08-30 2024-03-06 Novaled GmbH Organic electroluminescent device comprising a compound of formula (i) and a compound of formula (ii), and display device comprising the organic electroluminescent device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478753A (en) * 1981-09-29 1984-10-23 Matsushita Electric Industrial Co., Ltd. Process for the production of 11,11,12,12-tetracyano-9,10-anthraquinodimehane _or its derivatives

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3408367A (en) * 1965-07-12 1968-10-29 Du Pont Tetraaryl-1, 4-bis(dicyano-methylene)cyclohexadienes and their dihydro derivatives
EP0061264B1 (en) 1981-03-13 1985-07-24 Matsushita Electric Industrial Co., Ltd. Tetracyanoanthraquinodimethane compounds and processes for the production thereof, polymers and charge-transfer complexes derived therefrom
JPS5810553A (en) * 1981-07-10 1983-01-21 Matsushita Electric Ind Co Ltd Preparation of tetracyanoanthraquinodimethane derivative
JPS57149259A (en) 1981-03-13 1982-09-14 Matsushita Electric Ind Co Ltd Tetracyanoquinodimethane derivative
US4394428A (en) * 1981-09-24 1983-07-19 Eastman Kodak Company Photoconductive composition and elements comprising two different compounds having a dioxaborin nucleas on a derivative thereof
US4578220A (en) * 1983-10-19 1986-03-25 Basf Aktiengesellschaft Charge transfer complexes of tetrathio/seleno-fulvalene derivatives and biscyanimine derivatives; biscyanimine derivatives and method for producing same
DE3522232A1 (en) * 1985-06-21 1987-01-02 Basf Ag RADIKALION SALTS
DE3718365A1 (en) * 1987-06-02 1988-12-22 Basf Ag N, N'-BISCYANO-P-BENZOQUINONE BISIMINE, THESE CHARGE TRANSFER COMPLEXES AND RADICALION SALTS CONTAINING THE BISCYANO-BENZOQUINONE BISIMINE
JP2699429B2 (en) * 1988-08-02 1998-01-19 ミノルタ株式会社 Photoconductor
JPH02213088A (en) * 1989-02-13 1990-08-24 Nec Corp Organic thin film el element and manufacture thereof
US5068367A (en) 1990-01-31 1991-11-26 E. I. Du Pont De Nemours And Company Tetracyano-1,4-hydroquinone and tetracyano-1, 4-benzoquinone
JP2846503B2 (en) 1990-06-14 1999-01-13 出光興産株式会社 Device thin film electrode, electroluminescent device having the same, and methods of manufacturing the same
US5068366A (en) 1990-08-06 1991-11-26 Texaco Chemical Company Simultaneous epoxide and carboxylic acid manufacture by co-oxidation in the presence of a cobalt catalyst
JP2923339B2 (en) * 1990-08-17 1999-07-26 汪芳 白井 Dinuclear ferrocenes containing diacetylene groups, their polymers and their charge transfer complexes
JPH07116496B2 (en) 1990-10-09 1995-12-13 三井金属鉱業株式会社 Method for producing magnetic metal powder for magnetic recording
US5216661A (en) * 1991-07-22 1993-06-01 The Johns Hopkins University Electron density storage device using a stm
JPH08250016A (en) * 1995-03-07 1996-09-27 Tdk Corp Overcurrent protective element and its manufacture
US5849403A (en) * 1995-09-13 1998-12-15 Kabushiki Kaisha Toshiba Organic thin film device
JP2000159777A (en) * 1998-09-25 2000-06-13 Fuji Photo Film Co Ltd New dioxoborane compound, material for light emission element and light emission element using the same
DE10058578C2 (en) * 2000-11-20 2002-11-28 Univ Dresden Tech Light-emitting component with organic layers
DE10105916A1 (en) * 2001-02-09 2002-08-22 Siemens Ag Amorphous organic 1,3,2-dioxaborine luminophores, process for their preparation and their use
DE60238123D1 (en) * 2001-08-09 2010-12-09 Asahi Chemical Ind ORGANIC SEMICONDUCTOR LAYER AND METHOD FOR THE PRODUCTION THEREOF
DE10152938C1 (en) * 2001-10-26 2002-11-21 Infineon Technologies Ag New bridged 4,4'-bis(1,3,2-dioxaborin) compounds are used in organic semiconductor device, preferably field effect transistor or diode
DE20121631U1 (en) * 2001-11-09 2003-06-18 Friz Biochem Gmbh Molecular electronic component for construction of nanoscale electronic circuits comprises a redox active unit with an electron donor and an electron acceptor with permanent contact points for connection to or components
JP2003264085A (en) * 2001-12-05 2003-09-19 Semiconductor Energy Lab Co Ltd Organic semiconductor element, organic electroluminescence element and organic solar cell
TW538551B (en) * 2002-06-13 2003-06-21 Lightronik Technology Inc Organic electroluminescence (OEL) device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478753A (en) * 1981-09-29 1984-10-23 Matsushita Electric Industrial Co., Ltd. Process for the production of 11,11,12,12-tetracyano-9,10-anthraquinodimehane _or its derivatives

Cited By (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007028733A1 (en) * 2005-09-05 2007-03-15 Siemens Aktiengesellschaft Novel materials for improving the hole injection in organic electronic devices and use of the material
US20090152535A1 (en) * 2005-09-05 2009-06-18 Andreas Kanitz Novel materials for improving the hole injection in organic electronic devices and use of the material
US7947975B2 (en) 2005-09-05 2011-05-24 Osram Opto Semiconductors Gmbh Materials for improving the hole injection in organic electronic devices and use of the material
KR101339712B1 (en) 2005-09-05 2013-12-11 오스람 옵토 세미컨덕터스 게엠베하 Novel materials for improving the hole injection in organic electronic devices and use of the material
US20090001359A1 (en) * 2005-12-12 2009-01-01 Polyic Gmbh & Co. Kg Redox Systems for Stabilization and Life Extension of Polymer Semiconductors
WO2007068423A1 (en) * 2005-12-12 2007-06-21 Polyic Gmbh & Co. Kg Redox systems for stabilization and life extension of polymer semiconductors
US20100132770A1 (en) * 2006-02-09 2010-06-03 Beatty Paul H J Device including semiconductor nanocrystals and a layer including a doped organic material and methods
US20110089411A1 (en) * 2008-06-27 2011-04-21 Chuanjun Xia Cross linkable ionic compounds
US9184394B2 (en) 2008-06-27 2015-11-10 Universal Display Corporation Cross linkable ionic compounds
US9062064B2 (en) 2008-12-15 2015-06-23 Novaled Ag Heterocyclic compounds and the use thereof in electronic and optoelectronic components
DE102008061843A1 (en) 2008-12-15 2010-06-17 Novaled Ag Heterocyclic compounds and their use in electronic and optoelectronic devices
DE102009013685A1 (en) 2009-03-20 2010-09-23 Novaled Ag Organic zener diode, electronic circuit and method of operating an organic zener diode
US9306182B2 (en) 2009-03-20 2016-04-05 Novaled Ag Organic zener diode, electronic circuit, and method for operating an organic zener diode
US20110084258A1 (en) * 2009-10-12 2011-04-14 Tae-Shick Kim Organic light-emitting device
US8617721B2 (en) 2009-10-12 2013-12-31 Samsung Display Co., Ltd. Organic light-emitting device
US9024181B2 (en) 2010-05-04 2015-05-05 Heliatek Gmbh Photoactive component comprising organic layers
US9112163B2 (en) 2010-06-21 2015-08-18 Heliatek Gmbh Photoactive component having a plurality of transport layer systems
US9590182B2 (en) 2011-11-25 2017-03-07 Jnc Corporation Benzofluorene compound, material for luminescent layer using said compound and organic electroluminescent device
US11114626B2 (en) 2012-09-24 2021-09-07 Arizona Board Of Regents On Behalf Of Arizona State University Metal compounds, methods, and uses thereof
US11189808B2 (en) 2013-10-14 2021-11-30 Arizona Board Of Regents On Behalf Of Arizona State University Platinum complexes and devices
US11930698B2 (en) 2014-01-07 2024-03-12 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate platinum and palladium complex emitters containing phenyl-pyrazole and its analogues
US11011712B2 (en) 2014-06-02 2021-05-18 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate cyclometalated platinum complexes containing 9,10-dihydroacridine and its analogues
US11839144B2 (en) 2014-06-02 2023-12-05 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate cyclometalated platinum complexes containing 9,10-dihydroacridine and its analogues
US10886478B2 (en) 2014-07-24 2021-01-05 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate platinum (II) complexes cyclometalated with functionalized phenyl carbene ligands and their analogues
US11329244B2 (en) 2014-08-22 2022-05-10 Arizona Board Of Regents On Behalf Of Arizona State University Organic light-emitting diodes with fluorescent and phosphorescent emitters
US10944064B2 (en) 2014-11-10 2021-03-09 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate metal complexes with carbon group bridging ligands
US11653560B2 (en) 2014-11-10 2023-05-16 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate metal complexes with carbon group bridging ligands
EP3056504A1 (en) 2015-02-16 2016-08-17 Universal Display Corporation Organic electroluminescent materials and devices
EP3061763A1 (en) 2015-02-27 2016-08-31 Universal Display Corporation Organic electroluminescent materials and devices
EP3098229A1 (en) 2015-05-15 2016-11-30 Universal Display Corporation Organic electroluminescent materials and devices
EP3101021A1 (en) 2015-06-01 2016-12-07 Universal Display Corporation Organic electroluminescent materials and devices
US11472827B2 (en) 2015-06-03 2022-10-18 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate and octahedral metal complexes containing naphthyridinocarbazole and its analogues
EP3124488A1 (en) 2015-07-29 2017-02-01 Universal Display Corporation Organic electroluminescent materials and devices
EP3159350A1 (en) 2015-09-03 2017-04-26 Universal Display Corporation Organic electroluminescent materials and devices
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EP3858842A1 (en) 2016-02-09 2021-08-04 Universal Display Corporation Organic electroluminescent materials and devices
EP3205658A1 (en) 2016-02-09 2017-08-16 Universal Display Corporation Organic electroluminescent materials and devices
EP4122941A1 (en) 2016-04-11 2023-01-25 Universal Display Corporation Organic electroluminescent materials and devices
EP3231809A2 (en) 2016-04-11 2017-10-18 Universal Display Corporation Organic electroluminescent materials and devices
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EP3270435A2 (en) 2016-06-20 2018-01-17 Universal Display Corporation Organic electroluminescent materials and devices
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US10822363B2 (en) 2016-10-12 2020-11-03 Arizona Board Of Regents On Behalf Of Arizona State University Narrow band red phosphorescent tetradentate platinum (II) complexes
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